JPS6357400B2 - - Google Patents
Info
- Publication number
- JPS6357400B2 JPS6357400B2 JP58150122A JP15012283A JPS6357400B2 JP S6357400 B2 JPS6357400 B2 JP S6357400B2 JP 58150122 A JP58150122 A JP 58150122A JP 15012283 A JP15012283 A JP 15012283A JP S6357400 B2 JPS6357400 B2 JP S6357400B2
- Authority
- JP
- Japan
- Prior art keywords
- manufacturing
- silicon carbide
- temperature
- reaction chamber
- seeds
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 23
- 239000013078 crystal Substances 0.000 claims description 22
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 22
- 238000006243 chemical reaction Methods 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 230000001681 protective effect Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 4
- 238000000859 sublimation Methods 0.000 claims description 4
- 230000008022 sublimation Effects 0.000 claims description 4
- 239000002244 precipitate Substances 0.000 claims description 3
- 238000000354 decomposition reaction Methods 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910002804 graphite Inorganic materials 0.000 description 7
- 239000010439 graphite Substances 0.000 description 7
- 238000001556 precipitation Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- 229910021431 alpha silicon carbide Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3230727.6 | 1982-08-18 | ||
| DE3230727A DE3230727C2 (de) | 1982-08-18 | 1982-08-18 | Verfahren zum Herstellen von Einkristallen aus Siliziumkarbid SiC |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5954697A JPS5954697A (ja) | 1984-03-29 |
| JPS6357400B2 true JPS6357400B2 (cs) | 1988-11-11 |
Family
ID=6171140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58150122A Granted JPS5954697A (ja) | 1982-08-18 | 1983-08-17 | 炭化ケイ素単結晶の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS5954697A (cs) |
| DE (1) | DE3230727C2 (cs) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09263497A (ja) * | 1996-03-29 | 1997-10-07 | Denso Corp | 炭化珪素単結晶の製造方法 |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0788274B2 (ja) * | 1985-09-18 | 1995-09-27 | 三洋電機株式会社 | ＳｉＣ単結晶の成長方法 |
| US4866005A (en) * | 1987-10-26 | 1989-09-12 | North Carolina State University | Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide |
| DE3915053C2 (de) * | 1989-05-08 | 1995-03-30 | Siemens Ag | Verfahren zum Herstellen von einkristallinem Siliziumkarbid SiC |
| EP0403887B1 (de) * | 1989-06-20 | 1993-04-28 | Siemens Aktiengesellschaft | Verfahren zum Herstellen von einkristallinem Siliziumkarbid |
| DE4310744A1 (de) * | 1993-04-01 | 1994-10-06 | Siemens Ag | Vorrichtung zum Herstellen von SiC-Einkristallen |
| SE9503426D0 (sv) * | 1995-10-04 | 1995-10-04 | Abb Research Ltd | A device for heat treatment of objects and a method for producing a susceptor |
| US6547877B2 (en) | 1996-01-22 | 2003-04-15 | The Fox Group, Inc. | Tantalum crucible fabrication and treatment |
| RU2094547C1 (ru) * | 1996-01-22 | 1997-10-27 | Юрий Александрович Водаков | Сублимационный способ выращивания монокристаллов карбида кремния и источник карбида кремния для осуществления способа |
| US6537371B2 (en) | 1997-01-22 | 2003-03-25 | The Fox Group, Inc. | Niobium crucible fabrication and treatment |
| US6562130B2 (en) | 1997-01-22 | 2003-05-13 | The Fox Group, Inc. | Low defect axially grown single crystal silicon carbide |
| ATE217368T1 (de) | 1997-01-22 | 2002-05-15 | Yury Alexandrovich Vodakov | Züchtung von siliziumkarbid einkristallen |
| WO1998033961A1 (en) * | 1997-01-31 | 1998-08-06 | Northrop Grumman Corporation | Apparatus for growing large silicon carbide single crystals |
| WO2000004211A1 (de) | 1998-07-13 | 2000-01-27 | Siemens Aktiengesellschaft | VERFAHREN ZUR ZÜCHTUNG VON SiC-EINKRISTALLEN |
| US6063185A (en) * | 1998-10-09 | 2000-05-16 | Cree, Inc. | Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy |
| EP1164211A4 (en) * | 1998-12-25 | 2003-05-02 | Showa Denko Kk | METHOD FOR GROWING A SINGLE-CRYSTAL MADE OF SILICON CARBIDE |
| DE19931332C2 (de) * | 1999-07-07 | 2002-06-06 | Siemens Ag | Vorrichtung zur Herstellung eines SiC-Einkristalls mit einem doppelwandigen Tiegel |
| EP1200650B1 (de) | 1999-07-07 | 2003-04-09 | Siemens Aktiengesellschaft | Vorrichtung zur sublimationszüchtung eines sic-einkristalls mit folienausgekleidetem tiegel |
| JP4691292B2 (ja) | 1999-07-07 | 2011-06-01 | エスアイクリスタル アクチエンゲゼルシャフト | ＳｉＣ種結晶の外周壁を有する種結晶ホルダ |
| DE50004010D1 (de) * | 1999-07-07 | 2003-11-13 | Siemens Ag | Verfahren zur sublimationszüchtung eines sic-einkristalls mit aufheizen unter züchtungsdruck |
| US6562131B2 (en) | 1999-07-20 | 2003-05-13 | The Fox Group, Inc. | Method for growing single crystal silicon carbide |
| US6824611B1 (en) | 1999-10-08 | 2004-11-30 | Cree, Inc. | Method and apparatus for growing silicon carbide crystals |
| US7056383B2 (en) | 2004-02-13 | 2006-06-06 | The Fox Group, Inc. | Tantalum based crucible |
| WO2010111473A1 (en) | 2009-03-26 | 2010-09-30 | Ii-Vi Incorporated | Sic single crystal sublimation growth method and apparatus |
| JP4888548B2 (ja) * | 2009-12-24 | 2012-02-29 | 株式会社デンソー | 炭化珪素単結晶の製造装置および製造方法 |
| CN114000197B (zh) | 2015-09-24 | 2025-01-10 | 帕里杜斯有限公司 | 气相沉积装置以及使用高纯度聚合物衍生的碳化硅的技术 |
-
1982
- 1982-08-18 DE DE3230727A patent/DE3230727C2/de not_active Expired
-
1983
- 1983-08-17 JP JP58150122A patent/JPS5954697A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| JOURNAL OF CRYSTAL GROWTH=1976 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09263497A (ja) * | 1996-03-29 | 1997-10-07 | Denso Corp | 炭化珪素単結晶の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3230727A1 (de) | 1984-02-23 |
| DE3230727C2 (de) | 1987-02-19 |
| JPS5954697A (ja) | 1984-03-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6357400B2 (cs) | ||
| US5968261A (en) | Method for growing large silicon carbide single crystals | |
| EP1144737B1 (en) | Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride:silicon carbide alloy | |
| EP0712150B1 (en) | Sublimation growth of silicon carbide single crystals | |
| EP1218572B1 (en) | Method and apparatus for growing silicon carbide crystals | |
| US7524376B2 (en) | Method and apparatus for aluminum nitride monocrystal boule growth | |
| JP3898278B2 (ja) | 炭化ケイ素単結晶の製造方法及びその製造装置 | |
| US5879462A (en) | Device for heat treatment of objects and a method for producing a susceptor | |
| KR20120082873A (ko) | ＳｉＣ 단결정의 승화 성장 | |
| WO2000022203A9 (en) | Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride:silicon carbide alloy | |
| EP1803840A2 (en) | Method for growing single crystal of silicon carbide | |
| RU2094547C1 (ru) | Сублимационный способ выращивания монокристаллов карбида кремния и источник карбида кремния для осуществления способа | |
| US3275415A (en) | Apparatus for and preparation of silicon carbide single crystals | |
| EP1540048B1 (en) | Silicon carbide single crystal and method and apparatus for producing the same | |
| JP4052678B2 (ja) | 大形炭化珪素単結晶成長装置 | |
| JPH10509689A (ja) | 昇華育種による炭化シリコン単結晶の製造方法及び装置 | |
| JPH08295595A (ja) | 単結晶成長装置 | |
| JP3590485B2 (ja) | 単結晶炭化珪素インゴット及びその製造方法 | |
| JPH03295898A (ja) | 炭化珪素単結晶成長方法および装置 | |
| JP3590464B2 (ja) | ４ｈ型単結晶炭化珪素の製造方法 | |
| JPH06298600A (ja) | ＳｉＣ単結晶の成長方法 | |
| JP4309509B2 (ja) | 熱分解黒鉛からなる単結晶成長用のルツボの製造方法 | |
| NL2029666B1 (en) | MANUFACTURING METHOD OF SILICON CARBIDE (SiC) SINGLE CRYSTAL | |
| JPH06298514A (ja) | 高純度炭化ケイ素の製造方法 | |
| JP2011201756A (ja) | 単結晶炭化珪素の製造方法 |