JPS6356199B2 - - Google Patents

Info

Publication number
JPS6356199B2
JPS6356199B2 JP58135136A JP13513683A JPS6356199B2 JP S6356199 B2 JPS6356199 B2 JP S6356199B2 JP 58135136 A JP58135136 A JP 58135136A JP 13513683 A JP13513683 A JP 13513683A JP S6356199 B2 JPS6356199 B2 JP S6356199B2
Authority
JP
Japan
Prior art keywords
molecular beam
crystal
intensity ratio
beam intensity
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58135136A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6027689A (ja
Inventor
Yoshitoku Nomura
Minoru Mihara
Jun Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58135136A priority Critical patent/JPS6027689A/ja
Publication of JPS6027689A publication Critical patent/JPS6027689A/ja
Publication of JPS6356199B2 publication Critical patent/JPS6356199B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP58135136A 1983-07-26 1983-07-26 ＡｌＧａＡｓ結晶の分子線結晶成長法 Granted JPS6027689A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58135136A JPS6027689A (ja) 1983-07-26 1983-07-26 ＡｌＧａＡｓ結晶の分子線結晶成長法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58135136A JPS6027689A (ja) 1983-07-26 1983-07-26 ＡｌＧａＡｓ結晶の分子線結晶成長法

Publications (2)

Publication Number Publication Date
JPS6027689A JPS6027689A (ja) 1985-02-12
JPS6356199B2 true JPS6356199B2 (enrdf_load_stackoverflow) 1988-11-07

Family

ID=15144644

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58135136A Granted JPS6027689A (ja) 1983-07-26 1983-07-26 ＡｌＧａＡｓ結晶の分子線結晶成長法

Country Status (1)

Country Link
JP (1) JPS6027689A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61227164A (ja) * 1985-03-29 1986-10-09 Agency Of Ind Science & Technol 固体蒸発制御法
JPS6217093A (ja) * 1985-07-13 1987-01-26 Agency Of Ind Science & Technol 薄膜結晶成長法
JPH01176292A (ja) * 1987-12-29 1989-07-12 Nec Corp 分子線エピタキシャル成長方法及び装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5141546A (ja) * 1974-10-05 1976-04-07 Tokyo Seimitsu Co Ltd Setsushokukaitengatachotsukeisokuteisochi
JPS5537092A (en) * 1978-09-05 1980-03-14 Ibm Mode switch for setting threshold value

Also Published As

Publication number Publication date
JPS6027689A (ja) 1985-02-12

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