JPS6027689A - ＡｌＧａＡｓ結晶の分子線結晶成長法 - Google Patents
ＡｌＧａＡｓ結晶の分子線結晶成長法Info
- Publication number
- JPS6027689A JPS6027689A JP58135136A JP13513683A JPS6027689A JP S6027689 A JPS6027689 A JP S6027689A JP 58135136 A JP58135136 A JP 58135136A JP 13513683 A JP13513683 A JP 13513683A JP S6027689 A JPS6027689 A JP S6027689A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- molecular beam
- substrate
- intensity ratio
- beam intensity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 6
- 238000002109 crystal growth method Methods 0.000 claims description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract description 9
- 230000008020 evaporation Effects 0.000 abstract description 9
- 238000001704 evaporation Methods 0.000 abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 abstract description 5
- 229910052733 gallium Inorganic materials 0.000 abstract description 5
- 239000012535 impurity Substances 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 4
- 229910052785 arsenic Inorganic materials 0.000 abstract description 2
- 230000000737 periodic effect Effects 0.000 description 24
- 238000010894 electron beam technology Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000002003 electron diffraction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000000103 photoluminescence spectrum Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007562 laser obscuration time method Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58135136A JPS6027689A (ja) | 1983-07-26 | 1983-07-26 | ＡｌＧａＡｓ結晶の分子線結晶成長法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58135136A JPS6027689A (ja) | 1983-07-26 | 1983-07-26 | ＡｌＧａＡｓ結晶の分子線結晶成長法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6027689A true JPS6027689A (ja) | 1985-02-12 |
| JPS6356199B2 JPS6356199B2 (enrdf_load_stackoverflow) | 1988-11-07 |
Family
ID=15144644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58135136A Granted JPS6027689A (ja) | 1983-07-26 | 1983-07-26 | ＡｌＧａＡｓ結晶の分子線結晶成長法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6027689A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61227164A (ja) * | 1985-03-29 | 1986-10-09 | Agency Of Ind Science & Technol | 固体蒸発制御法 |
| JPS6217093A (ja) * | 1985-07-13 | 1987-01-26 | Agency Of Ind Science & Technol | 薄膜結晶成長法 |
| JPH01176292A (ja) * | 1987-12-29 | 1989-07-12 | Nec Corp | 分子線エピタキシャル成長方法及び装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5141546A (ja) * | 1974-10-05 | 1976-04-07 | Tokyo Seimitsu Co Ltd | Setsushokukaitengatachotsukeisokuteisochi |
| JPS5537092A (en) * | 1978-09-05 | 1980-03-14 | Ibm | Mode switch for setting threshold value |
-
1983
- 1983-07-26 JP JP58135136A patent/JPS6027689A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5141546A (ja) * | 1974-10-05 | 1976-04-07 | Tokyo Seimitsu Co Ltd | Setsushokukaitengatachotsukeisokuteisochi |
| JPS5537092A (en) * | 1978-09-05 | 1980-03-14 | Ibm | Mode switch for setting threshold value |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61227164A (ja) * | 1985-03-29 | 1986-10-09 | Agency Of Ind Science & Technol | 固体蒸発制御法 |
| JPS6217093A (ja) * | 1985-07-13 | 1987-01-26 | Agency Of Ind Science & Technol | 薄膜結晶成長法 |
| JPH01176292A (ja) * | 1987-12-29 | 1989-07-12 | Nec Corp | 分子線エピタキシャル成長方法及び装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6356199B2 (enrdf_load_stackoverflow) | 1988-11-07 |
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