JPS6355209B2 - - Google Patents

Info

Publication number
JPS6355209B2
JPS6355209B2 JP13628680A JP13628680A JPS6355209B2 JP S6355209 B2 JPS6355209 B2 JP S6355209B2 JP 13628680 A JP13628680 A JP 13628680A JP 13628680 A JP13628680 A JP 13628680A JP S6355209 B2 JPS6355209 B2 JP S6355209B2
Authority
JP
Japan
Prior art keywords
ray
thin film
base thin
absorber pattern
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP13628680A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5760839A (en
Inventor
Masaki Ito
Sotaro Edokoro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP13628680A priority Critical patent/JPS5760839A/ja
Publication of JPS5760839A publication Critical patent/JPS5760839A/ja
Publication of JPS6355209B2 publication Critical patent/JPS6355209B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Weting (AREA)
JP13628680A 1980-09-30 1980-09-30 Manufacture of x-ray exposure mask Granted JPS5760839A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13628680A JPS5760839A (en) 1980-09-30 1980-09-30 Manufacture of x-ray exposure mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13628680A JPS5760839A (en) 1980-09-30 1980-09-30 Manufacture of x-ray exposure mask

Publications (2)

Publication Number Publication Date
JPS5760839A JPS5760839A (en) 1982-04-13
JPS6355209B2 true JPS6355209B2 (enrdf_load_stackoverflow) 1988-11-01

Family

ID=15171617

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13628680A Granted JPS5760839A (en) 1980-09-30 1980-09-30 Manufacture of x-ray exposure mask

Country Status (1)

Country Link
JP (1) JPS5760839A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5950443A (ja) * 1982-09-16 1984-03-23 Hitachi Ltd X線マスク
JP3073067B2 (ja) * 1991-10-04 2000-08-07 キヤノン株式会社 X線露光用マスク及びその製造方法

Also Published As

Publication number Publication date
JPS5760839A (en) 1982-04-13

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