JPS5760839A - Manufacture of x-ray exposure mask - Google Patents

Manufacture of x-ray exposure mask

Info

Publication number
JPS5760839A
JPS5760839A JP13628680A JP13628680A JPS5760839A JP S5760839 A JPS5760839 A JP S5760839A JP 13628680 A JP13628680 A JP 13628680A JP 13628680 A JP13628680 A JP 13628680A JP S5760839 A JPS5760839 A JP S5760839A
Authority
JP
Japan
Prior art keywords
pattern
mask
plating
film
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13628680A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6355209B2 (enrdf_load_stackoverflow
Inventor
Masaki Ito
Sotaro Edokoro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13628680A priority Critical patent/JPS5760839A/ja
Publication of JPS5760839A publication Critical patent/JPS5760839A/ja
Publication of JPS6355209B2 publication Critical patent/JPS6355209B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Weting (AREA)
JP13628680A 1980-09-30 1980-09-30 Manufacture of x-ray exposure mask Granted JPS5760839A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13628680A JPS5760839A (en) 1980-09-30 1980-09-30 Manufacture of x-ray exposure mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13628680A JPS5760839A (en) 1980-09-30 1980-09-30 Manufacture of x-ray exposure mask

Publications (2)

Publication Number Publication Date
JPS5760839A true JPS5760839A (en) 1982-04-13
JPS6355209B2 JPS6355209B2 (enrdf_load_stackoverflow) 1988-11-01

Family

ID=15171617

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13628680A Granted JPS5760839A (en) 1980-09-30 1980-09-30 Manufacture of x-ray exposure mask

Country Status (1)

Country Link
JP (1) JPS5760839A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4599737A (en) * 1982-09-16 1986-07-08 Hitachi, Ltd. X-ray mask with Ni pattern
US5247557A (en) * 1991-10-04 1993-09-21 Canon Kabushiki Kaisha X-ray mask structure, manufacturing method, x-ray exposure method using same, and device manufactured by using same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4599737A (en) * 1982-09-16 1986-07-08 Hitachi, Ltd. X-ray mask with Ni pattern
US5247557A (en) * 1991-10-04 1993-09-21 Canon Kabushiki Kaisha X-ray mask structure, manufacturing method, x-ray exposure method using same, and device manufactured by using same

Also Published As

Publication number Publication date
JPS6355209B2 (enrdf_load_stackoverflow) 1988-11-01

Similar Documents

Publication Publication Date Title
JPS5548935A (en) Forming of electrode pattern
JPS5430777A (en) Manufacture of semiconductor device
JPS5669835A (en) Method for forming thin film pattern
JPS5760839A (en) Manufacture of x-ray exposure mask
JPS5432143A (en) Etching process
JPS52117558A (en) Soft x-ray exposure mask and its manufacturing method
EP0057268A3 (en) Method of fabricating x-ray lithographic masks
JPS5461931A (en) Forming method of photo resist patterns
JPS57190366A (en) Manufacture of semiconductor pressure sensor
JPS5760840A (en) Manufacture of silicon mask for x-ray exposure
JPS52117557A (en) Soft x-ray exposure mask and its manufacturing method
JPS6473720A (en) Manufacture of mask for x-ray exposure
JPS6446926A (en) Manufacture of mask for x-ray exposure
JPS56132343A (en) Mask for x-ray exposure and its manufacture
JPS56150829A (en) Manufacture of aperture iris
JPS5533035A (en) Forming of resist pattern shaped like inverted truncated pyramid
JPS5588331A (en) X-ray exposing mask
JPS5463682A (en) Production of mask for x-ray exposure
JPS5413334A (en) Exposure
JPS5452473A (en) Forming method for coating for fine pattern
JPS565545A (en) Transfer mask for x-ray exposure and its production
JPS56115534A (en) Formation of pattern
JPS5459873A (en) Production of semiconductor device
JPS551117A (en) Manufacture of semiconductor device
JPS54109775A (en) Manufacture of semiconductor device