JPS6350851Y2 - - Google Patents
Info
- Publication number
- JPS6350851Y2 JPS6350851Y2 JP15788283U JP15788283U JPS6350851Y2 JP S6350851 Y2 JPS6350851 Y2 JP S6350851Y2 JP 15788283 U JP15788283 U JP 15788283U JP 15788283 U JP15788283 U JP 15788283U JP S6350851 Y2 JPS6350851 Y2 JP S6350851Y2
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- pair
- channel
- opposite conductivity
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 7
- 239000000470 constituent Substances 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15788283U JPS5984844U (ja) | 1983-10-12 | 1983-10-12 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15788283U JPS5984844U (ja) | 1983-10-12 | 1983-10-12 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5984844U JPS5984844U (ja) | 1984-06-08 |
| JPS6350851Y2 true JPS6350851Y2 (enrdf_load_stackoverflow) | 1988-12-27 |
Family
ID=30347964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15788283U Granted JPS5984844U (ja) | 1983-10-12 | 1983-10-12 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5984844U (enrdf_load_stackoverflow) |
-
1983
- 1983-10-12 JP JP15788283U patent/JPS5984844U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5984844U (ja) | 1984-06-08 |
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