JPS6348186B2 - - Google Patents
Info
- Publication number
- JPS6348186B2 JPS6348186B2 JP58169788A JP16978883A JPS6348186B2 JP S6348186 B2 JPS6348186 B2 JP S6348186B2 JP 58169788 A JP58169788 A JP 58169788A JP 16978883 A JP16978883 A JP 16978883A JP S6348186 B2 JPS6348186 B2 JP S6348186B2
- Authority
- JP
- Japan
- Prior art keywords
- upper electrode
- unit capacitance
- capacitance element
- semiconductor integrated
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/206—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors
Landscapes
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58169788A JPS6060751A (ja) | 1983-09-14 | 1983-09-14 | 半導体集積回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58169788A JPS6060751A (ja) | 1983-09-14 | 1983-09-14 | 半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6060751A JPS6060751A (ja) | 1985-04-08 |
JPS6348186B2 true JPS6348186B2 (enrdf_load_stackoverflow) | 1988-09-28 |
Family
ID=15892883
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58169788A Granted JPS6060751A (ja) | 1983-09-14 | 1983-09-14 | 半導体集積回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6060751A (enrdf_load_stackoverflow) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6461043A (en) * | 1987-09-01 | 1989-03-08 | Nec Corp | Semiconductor device |
JPH0864764A (ja) * | 1994-08-25 | 1996-03-08 | Nippon Motorola Ltd | ユニットキャパシタ |
JP2004179419A (ja) | 2002-11-27 | 2004-06-24 | Toshiba Corp | 半導体装置及びその製造方法 |
CN103765574B (zh) * | 2011-08-24 | 2017-06-30 | 瑞萨电子株式会社 | 半导体装置 |
-
1983
- 1983-09-14 JP JP58169788A patent/JPS6060751A/ja active Granted
Non-Patent Citations (1)
Title |
---|
IEEE JOURNAL OF SOLID-STATE CIRCUITS=1975 * |
Also Published As
Publication number | Publication date |
---|---|
JPS6060751A (ja) | 1985-04-08 |
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