JPS6461043A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6461043A
JPS6461043A JP21940187A JP21940187A JPS6461043A JP S6461043 A JPS6461043 A JP S6461043A JP 21940187 A JP21940187 A JP 21940187A JP 21940187 A JP21940187 A JP 21940187A JP S6461043 A JPS6461043 A JP S6461043A
Authority
JP
Japan
Prior art keywords
capacity
electrode
error
decrease
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21940187A
Other languages
Japanese (ja)
Inventor
Masayuki Minowa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP21940187A priority Critical patent/JPS6461043A/en
Publication of JPS6461043A publication Critical patent/JPS6461043A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce correlation capacity and to decrease the error of a capacity ratio by providing an interference preventing shielding conductor layer on the periphery of a second capacity electrode of a capacity element. CONSTITUTION:A capacity electrode 2 of a lower layer is provided on an insulating film 1. A capacity electrode 4 of an upper layer and a shielding conductor layer 5 for preventing an interference to surround the electrode 4 are provided through a dielectric film 3 on the electrode 2. Further, the entirety is covered with an insulating film 6, a contact window is opened, and wirings 7 are provided thereon. Thus, its correlation capacity is reduced to decrease the error of its capacity ratio.
JP21940187A 1987-09-01 1987-09-01 Semiconductor device Pending JPS6461043A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21940187A JPS6461043A (en) 1987-09-01 1987-09-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21940187A JPS6461043A (en) 1987-09-01 1987-09-01 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6461043A true JPS6461043A (en) 1989-03-08

Family

ID=16734833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21940187A Pending JPS6461043A (en) 1987-09-01 1987-09-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6461043A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6060751A (en) * 1983-09-14 1985-04-08 Nec Corp Semiconductor integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6060751A (en) * 1983-09-14 1985-04-08 Nec Corp Semiconductor integrated circuit

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