JPS644056A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS644056A
JPS644056A JP15764487A JP15764487A JPS644056A JP S644056 A JPS644056 A JP S644056A JP 15764487 A JP15764487 A JP 15764487A JP 15764487 A JP15764487 A JP 15764487A JP S644056 A JPS644056 A JP S644056A
Authority
JP
Japan
Prior art keywords
film
capacity
recessed
wiring
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15764487A
Other languages
Japanese (ja)
Inventor
Toru Inaba
Noboru Horie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15764487A priority Critical patent/JPS644056A/en
Publication of JPS644056A publication Critical patent/JPS644056A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a capacity structure applicable to a semiconductor device of high density, by forming capacity elements on recessed/projected grooved surfaces of an interlayer insulating film. CONSTITUTION:An organic resin film 20 is formed thick to cover a semiconductor element and Al wirings 18 and 19. Recessed/projected grooves 22 are opened on capacity forming parts, with a mask 21 in between. A hole 23 is opened at the same time. When the grooves 22 are covered with a mask 24 and the hole 23 is etched, a through hole 25 is formed to reach a first layered Al wiring 19. A lower electrode 26a for capacity and a second layered Al wiring 26b connected to the wiring 19 are formed by patterning an Al film 26 formed on the whole surface. A dielectric film 27 is formed on the Al film 26a. An Al film 28 serving as an upper electrode for the capacity is formed on the dielectric film 27. Capacity elements are thus formed on the recessed/projected parts of the insulating film which covers the semiconductor region.
JP15764487A 1987-06-26 1987-06-26 Semiconductor device Pending JPS644056A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15764487A JPS644056A (en) 1987-06-26 1987-06-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15764487A JPS644056A (en) 1987-06-26 1987-06-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS644056A true JPS644056A (en) 1989-01-09

Family

ID=15654229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15764487A Pending JPS644056A (en) 1987-06-26 1987-06-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS644056A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6346454B1 (en) 1999-01-12 2002-02-12 Agere Systems Guardian Corp. Method of making dual damascene interconnect structure and metal electrode capacitor
JP2007059761A (en) * 2005-08-26 2007-03-08 Hitachi Ltd Semiconductor device and method of manufacturing same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6346454B1 (en) 1999-01-12 2002-02-12 Agere Systems Guardian Corp. Method of making dual damascene interconnect structure and metal electrode capacitor
JP2007059761A (en) * 2005-08-26 2007-03-08 Hitachi Ltd Semiconductor device and method of manufacturing same

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