JPS6348133Y2 - - Google Patents

Info

Publication number
JPS6348133Y2
JPS6348133Y2 JP1980054837U JP5483780U JPS6348133Y2 JP S6348133 Y2 JPS6348133 Y2 JP S6348133Y2 JP 1980054837 U JP1980054837 U JP 1980054837U JP 5483780 U JP5483780 U JP 5483780U JP S6348133 Y2 JPS6348133 Y2 JP S6348133Y2
Authority
JP
Japan
Prior art keywords
layer
gate
turn
gate electrode
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1980054837U
Other languages
English (en)
Japanese (ja)
Other versions
JPS56157760U (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1980054837U priority Critical patent/JPS6348133Y2/ja
Publication of JPS56157760U publication Critical patent/JPS56157760U/ja
Application granted granted Critical
Publication of JPS6348133Y2 publication Critical patent/JPS6348133Y2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
JP1980054837U 1980-04-22 1980-04-22 Expired JPS6348133Y2 (enrdf_load_stackoverflow)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1980054837U JPS6348133Y2 (enrdf_load_stackoverflow) 1980-04-22 1980-04-22

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1980054837U JPS6348133Y2 (enrdf_load_stackoverflow) 1980-04-22 1980-04-22

Publications (2)

Publication Number Publication Date
JPS56157760U JPS56157760U (enrdf_load_stackoverflow) 1981-11-25
JPS6348133Y2 true JPS6348133Y2 (enrdf_load_stackoverflow) 1988-12-12

Family

ID=29649543

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1980054837U Expired JPS6348133Y2 (enrdf_load_stackoverflow) 1980-04-22 1980-04-22

Country Status (1)

Country Link
JP (1) JPS6348133Y2 (enrdf_load_stackoverflow)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5934146Y2 (ja) * 1978-01-13 1984-09-21 株式会社明電舎 ゲ−トタ−ンオフサイリスタ構造
JPS6031266Y2 (ja) * 1978-06-08 1985-09-18 株式会社明電舎 ゲ−トタ−ンオフサイリスタ

Also Published As

Publication number Publication date
JPS56157760U (enrdf_load_stackoverflow) 1981-11-25

Similar Documents

Publication Publication Date Title
JP2766239B2 (ja) 高耐圧半導体装置
US4514747A (en) Field controlled thyristor with double-diffused source region
JPS589366A (ja) トランジスタ
EP0663698B1 (en) Semiconductor device and its manufacture
JPS5840345B2 (ja) サイリスタ
JPS607394B2 (ja) 半導体制御素子
JPS5912026B2 (ja) サイリスタ
JPH05299658A (ja) 半導体装置及びその製造方法
US5554880A (en) Uniform current density and high current gain bipolar transistor
JPS6348133Y2 (enrdf_load_stackoverflow)
US4165516A (en) Semiconductor device and method of manufacturing same
JPH0195568A (ja) 半導体装置
JPH0610700Y2 (ja) ショットキバリアダイオード
JPS5934147Y2 (ja) ゲ−トタ−ンオフサイリスタ
JPS6245710B2 (enrdf_load_stackoverflow)
JP3149913B2 (ja) トランジスタの製造方法
US3585465A (en) Microwave power transistor with a base region having low-and-high-conductivity portions
JPH0691245B2 (ja) ゲ−トタ−ンオフサイリスタ
JP2583032B2 (ja) 受光素子
JPS6018148B2 (ja) 半導体記憶装置の製造方法
JPS6031266Y2 (ja) ゲ−トタ−ンオフサイリスタ
JPH07221288A (ja) 半導体装置およびその製造方法
JPS5916414B2 (ja) 半導体装置
JPS5934146Y2 (ja) ゲ−トタ−ンオフサイリスタ構造
JPS60123062A (ja) 半導体集積回路の製造方法