JPS6347256B2 - - Google Patents
Info
- Publication number
- JPS6347256B2 JPS6347256B2 JP2236082A JP2236082A JPS6347256B2 JP S6347256 B2 JPS6347256 B2 JP S6347256B2 JP 2236082 A JP2236082 A JP 2236082A JP 2236082 A JP2236082 A JP 2236082A JP S6347256 B2 JPS6347256 B2 JP S6347256B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- silicon
- electron beam
- single crystal
- crystal silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010894 electron beam technology Methods 0.000 claims description 23
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 36
- 235000012239 silicon dioxide Nutrition 0.000 description 18
- 239000000377 silicon dioxide Substances 0.000 description 18
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- 239000012212 insulator Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2236082A JPS58139423A (ja) | 1982-02-15 | 1982-02-15 | ラテラルエピタキシヤル成長法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2236082A JPS58139423A (ja) | 1982-02-15 | 1982-02-15 | ラテラルエピタキシヤル成長法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58139423A JPS58139423A (ja) | 1983-08-18 |
| JPS6347256B2 true JPS6347256B2 (ko) | 1988-09-21 |
Family
ID=12080460
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2236082A Granted JPS58139423A (ja) | 1982-02-15 | 1982-02-15 | ラテラルエピタキシヤル成長法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58139423A (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01171346U (ko) * | 1988-05-23 | 1989-12-05 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6115319A (ja) * | 1984-07-02 | 1986-01-23 | Sharp Corp | 半導体装置の製造方法 |
| JPS61113229A (ja) * | 1984-11-08 | 1986-05-31 | Agency Of Ind Science & Technol | 半導体薄膜結晶層の製造方法 |
| JPS61160924A (ja) * | 1985-01-09 | 1986-07-21 | Agency Of Ind Science & Technol | 半導体薄膜結晶層の製造方法 |
| JPS61180422A (ja) * | 1985-02-06 | 1986-08-13 | Agency Of Ind Science & Technol | 半導体薄膜結晶層の製造方法 |
-
1982
- 1982-02-15 JP JP2236082A patent/JPS58139423A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01171346U (ko) * | 1988-05-23 | 1989-12-05 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58139423A (ja) | 1983-08-18 |
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