JPS6347153B2 - - Google Patents
Info
- Publication number
- JPS6347153B2 JPS6347153B2 JP56121578A JP12157881A JPS6347153B2 JP S6347153 B2 JPS6347153 B2 JP S6347153B2 JP 56121578 A JP56121578 A JP 56121578A JP 12157881 A JP12157881 A JP 12157881A JP S6347153 B2 JPS6347153 B2 JP S6347153B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- barrier layer
- sputtering
- tunnel
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000004888 barrier function Effects 0.000 claims description 60
- 239000010409 thin film Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 230000003647 oxidation Effects 0.000 claims description 12
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000000992 sputter etching Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 64
- 239000010410 layer Substances 0.000 description 40
- 238000004544 sputter deposition Methods 0.000 description 25
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 16
- 239000010408 film Substances 0.000 description 16
- 239000000758 substrate Substances 0.000 description 14
- 238000005530 etching Methods 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000002344 surface layer Substances 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000007261 regionalization Effects 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000002887 superconductor Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000001420 photoelectron spectroscopy Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56121578A JPS5821882A (ja) | 1981-08-03 | 1981-08-03 | トンネル形ジヨセフソン接合素子の製造方法 |
| CA000405292A CA1168762A (en) | 1981-06-22 | 1982-06-16 | Method of fabrication for josephson tunnel junction |
| US06/390,116 US4412902A (en) | 1981-06-22 | 1982-06-18 | Method of fabrication of Josephson tunnel junction |
| FR8211126A FR2508237B1 (fr) | 1981-06-22 | 1982-06-22 | Procede pour la fabrication d'une jonction de josephson, notamment d'une jonction tunnel de josephson |
| NL8202511A NL190858C (nl) | 1981-06-22 | 1982-06-22 | Werkwijze voor het vervaardigen van een Josephson-tunnelovergang. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56121578A JPS5821882A (ja) | 1981-08-03 | 1981-08-03 | トンネル形ジヨセフソン接合素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5821882A JPS5821882A (ja) | 1983-02-08 |
| JPS6347153B2 true JPS6347153B2 (enrdf_load_stackoverflow) | 1988-09-20 |
Family
ID=14814703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56121578A Granted JPS5821882A (ja) | 1981-06-22 | 1981-08-03 | トンネル形ジヨセフソン接合素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5821882A (enrdf_load_stackoverflow) |
-
1981
- 1981-08-03 JP JP56121578A patent/JPS5821882A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5821882A (ja) | 1983-02-08 |