JPS6258555B2 - - Google Patents
Info
- Publication number
- JPS6258555B2 JPS6258555B2 JP56125455A JP12545581A JPS6258555B2 JP S6258555 B2 JPS6258555 B2 JP S6258555B2 JP 56125455 A JP56125455 A JP 56125455A JP 12545581 A JP12545581 A JP 12545581A JP S6258555 B2 JPS6258555 B2 JP S6258555B2
- Authority
- JP
- Japan
- Prior art keywords
- amorphous
- layer
- electrode
- thin film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000004888 barrier function Effects 0.000 claims description 47
- 239000010409 thin film Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 47
- 239000000758 substrate Substances 0.000 description 25
- 239000010408 film Substances 0.000 description 22
- 150000001875 compounds Chemical class 0.000 description 14
- 229910019794 NbN Inorganic materials 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 12
- 238000000576 coating method Methods 0.000 description 12
- 230000003647 oxidation Effects 0.000 description 11
- 238000007254 oxidation reaction Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 10
- 239000007789 gas Substances 0.000 description 8
- 229910052758 niobium Inorganic materials 0.000 description 8
- 239000002887 superconductor Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 7
- 229910000555 a15 phase Inorganic materials 0.000 description 6
- 239000002344 surface layer Substances 0.000 description 6
- 229910052720 vanadium Inorganic materials 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 229910052745 lead Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000000593 degrading effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 102200020673 rs121912989 Human genes 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56125455A JPS5827385A (ja) | 1981-08-11 | 1981-08-11 | ジヨセフソン素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56125455A JPS5827385A (ja) | 1981-08-11 | 1981-08-11 | ジヨセフソン素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5827385A JPS5827385A (ja) | 1983-02-18 |
| JPS6258555B2 true JPS6258555B2 (enrdf_load_stackoverflow) | 1987-12-07 |
Family
ID=14910516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56125455A Granted JPS5827385A (ja) | 1981-08-11 | 1981-08-11 | ジヨセフソン素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5827385A (enrdf_load_stackoverflow) |
-
1981
- 1981-08-11 JP JP56125455A patent/JPS5827385A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5827385A (ja) | 1983-02-18 |
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