JPH0517714B2 - - Google Patents
Info
- Publication number
- JPH0517714B2 JPH0517714B2 JP61229536A JP22953686A JPH0517714B2 JP H0517714 B2 JPH0517714 B2 JP H0517714B2 JP 61229536 A JP61229536 A JP 61229536A JP 22953686 A JP22953686 A JP 22953686A JP H0517714 B2 JPH0517714 B2 JP H0517714B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- superconductor
- tunnel barrier
- nbn
- barrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002887 superconductor Substances 0.000 claims description 79
- 230000004888 barrier function Effects 0.000 claims description 50
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 24
- 238000006243 chemical reaction Methods 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 230000001590 oxidative effect Effects 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000005121 nitriding Methods 0.000 claims description 8
- 230000035515 penetration Effects 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000012298 atmosphere Substances 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 2
- 238000003682 fluorination reaction Methods 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 175
- 238000000034 method Methods 0.000 description 10
- 239000000470 constituent Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- PWKWDCOTNGQLID-UHFFFAOYSA-N [N].[Ar] Chemical compound [N].[Ar] PWKWDCOTNGQLID-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- AFYPFACVUDMOHA-UHFFFAOYSA-N chlorotrifluoromethane Chemical compound FC(F)(F)Cl AFYPFACVUDMOHA-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PXBRQCKWGAHEHS-UHFFFAOYSA-N dichlorodifluoromethane Chemical compound FC(F)(Cl)Cl PXBRQCKWGAHEHS-UHFFFAOYSA-N 0.000 description 1
- 235000019404 dichlorodifluoromethane Nutrition 0.000 description 1
- 238000001941 electron spectroscopy Methods 0.000 description 1
- 238000004334 fluoridation Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61229536A JPS6386486A (ja) | 1986-09-30 | 1986-09-30 | ジヨセフソン接合素子及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61229536A JPS6386486A (ja) | 1986-09-30 | 1986-09-30 | ジヨセフソン接合素子及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6386486A JPS6386486A (ja) | 1988-04-16 |
| JPH0517714B2 true JPH0517714B2 (enrdf_load_stackoverflow) | 1993-03-09 |
Family
ID=16893707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61229536A Granted JPS6386486A (ja) | 1986-09-30 | 1986-09-30 | ジヨセフソン接合素子及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6386486A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11495724B2 (en) * | 2020-07-21 | 2022-11-08 | International Business Machines Corporation | Superconducting structure and device surface termination with alloy |
-
1986
- 1986-09-30 JP JP61229536A patent/JPS6386486A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6386486A (ja) | 1988-04-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0515314B2 (enrdf_load_stackoverflow) | ||
| JPH0517714B2 (enrdf_load_stackoverflow) | ||
| US4458409A (en) | Process for producing niobium Josephson junctions | |
| JPS6047478A (ja) | ジヨセフソン接合素子 | |
| JP2918914B2 (ja) | 半導体装置及びその製造方法 | |
| JPH02186682A (ja) | ジョセフソン接合装置 | |
| JPH05211355A (ja) | ジョセフソン集積回路の製造方法 | |
| JP2899287B2 (ja) | ジョセフソン素子 | |
| JP2796137B2 (ja) | 超伝導トランジスタ | |
| JPH054828B2 (enrdf_load_stackoverflow) | ||
| JPS61144892A (ja) | シヨセフソン集積回路の製造方法 | |
| JP3241798B2 (ja) | 超電導デバイスの製造方法 | |
| JP2899308B2 (ja) | 超電導素子の製造方法 | |
| JP2825374B2 (ja) | 超電導素子 | |
| JPH02192402A (ja) | 酸化物超伝導材料の保護膜の形成方法 | |
| JP2691065B2 (ja) | 超電導素子および作製方法 | |
| JP2698364B2 (ja) | 超伝導コンタクトおよびその製造方法 | |
| KR950004595B1 (ko) | YBa₂Cu₃O_y 기판을 이용한 죠셉슨 터널접합(tunnel junction) 제조방법 | |
| JPS63194376A (ja) | ジヨセフソン接合素子 | |
| JPS59194482A (ja) | トンネル接合型ジヨセフソン素子 | |
| JPS6262077B2 (enrdf_load_stackoverflow) | ||
| JPH02271686A (ja) | ジョセフソン接合素子及びその製造方法 | |
| JPH0523073B2 (enrdf_load_stackoverflow) | ||
| JPH03263884A (ja) | ジョセフソン集積回路の製造方法 | |
| JPS62183576A (ja) | ジヨセフソン素子の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |