JPS6257273B2 - - Google Patents
Info
- Publication number
- JPS6257273B2 JPS6257273B2 JP56121577A JP12157781A JPS6257273B2 JP S6257273 B2 JPS6257273 B2 JP S6257273B2 JP 56121577 A JP56121577 A JP 56121577A JP 12157781 A JP12157781 A JP 12157781A JP S6257273 B2 JPS6257273 B2 JP S6257273B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- thin film
- tunnel
- barrier layer
- torr
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000004888 barrier function Effects 0.000 claims description 40
- 239000010409 thin film Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 238000000992 sputter etching Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 29
- 239000007789 gas Substances 0.000 description 26
- 230000003647 oxidation Effects 0.000 description 13
- 238000007254 oxidation reaction Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 12
- 150000001875 compounds Chemical class 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000002887 superconductor Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56121577A JPS5821881A (ja) | 1981-08-03 | 1981-08-03 | トンネル形ジヨセフソン接合素子の製造方法 |
| CA000405292A CA1168762A (en) | 1981-06-22 | 1982-06-16 | Method of fabrication for josephson tunnel junction |
| US06/390,116 US4412902A (en) | 1981-06-22 | 1982-06-18 | Method of fabrication of Josephson tunnel junction |
| FR8211126A FR2508237B1 (fr) | 1981-06-22 | 1982-06-22 | Procede pour la fabrication d'une jonction de josephson, notamment d'une jonction tunnel de josephson |
| NL8202511A NL190858C (nl) | 1981-06-22 | 1982-06-22 | Werkwijze voor het vervaardigen van een Josephson-tunnelovergang. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56121577A JPS5821881A (ja) | 1981-08-03 | 1981-08-03 | トンネル形ジヨセフソン接合素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5821881A JPS5821881A (ja) | 1983-02-08 |
| JPS6257273B2 true JPS6257273B2 (enrdf_load_stackoverflow) | 1987-11-30 |
Family
ID=14814677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56121577A Granted JPS5821881A (ja) | 1981-06-22 | 1981-08-03 | トンネル形ジヨセフソン接合素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5821881A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5839081A (ja) * | 1981-08-14 | 1983-03-07 | ウエスターン・エレクトリツク・カムパニー・インコーポレーテツド | 超伝導デバイスを製造する方法 |
-
1981
- 1981-08-03 JP JP56121577A patent/JPS5821881A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5821881A (ja) | 1983-02-08 |