JPS6346584B2 - - Google Patents

Info

Publication number
JPS6346584B2
JPS6346584B2 JP54116467A JP11646779A JPS6346584B2 JP S6346584 B2 JPS6346584 B2 JP S6346584B2 JP 54116467 A JP54116467 A JP 54116467A JP 11646779 A JP11646779 A JP 11646779A JP S6346584 B2 JPS6346584 B2 JP S6346584B2
Authority
JP
Japan
Prior art keywords
emitter
polycrystalline silicon
silicon layer
oxide film
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54116467A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5640276A (en
Inventor
Tomio Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP11646779A priority Critical patent/JPS5640276A/ja
Publication of JPS5640276A publication Critical patent/JPS5640276A/ja
Publication of JPS6346584B2 publication Critical patent/JPS6346584B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP11646779A 1979-09-11 1979-09-11 Preparation of semiconductor device Granted JPS5640276A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11646779A JPS5640276A (en) 1979-09-11 1979-09-11 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11646779A JPS5640276A (en) 1979-09-11 1979-09-11 Preparation of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5640276A JPS5640276A (en) 1981-04-16
JPS6346584B2 true JPS6346584B2 (en, 2012) 1988-09-16

Family

ID=14687818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11646779A Granted JPS5640276A (en) 1979-09-11 1979-09-11 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5640276A (en, 2012)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0455990U (en, 2012) * 1990-09-19 1992-05-13
JPH0455991U (en, 2012) * 1990-09-19 1992-05-13

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5546064B2 (en, 2012) * 1973-05-16 1980-11-21
JPS5630705B2 (en, 2012) * 1973-05-24 1981-07-16
JPS51130174A (en) * 1975-05-06 1976-11-12 Matsushita Electric Ind Co Ltd Semiconductor device process
JPS5919475B2 (ja) * 1977-12-14 1984-05-07 日本電信電話株式会社 半導体装置の製法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0455990U (en, 2012) * 1990-09-19 1992-05-13
JPH0455991U (en, 2012) * 1990-09-19 1992-05-13

Also Published As

Publication number Publication date
JPS5640276A (en) 1981-04-16

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