JPS6344293B2 - - Google Patents
Info
- Publication number
- JPS6344293B2 JPS6344293B2 JP54109958A JP10995879A JPS6344293B2 JP S6344293 B2 JPS6344293 B2 JP S6344293B2 JP 54109958 A JP54109958 A JP 54109958A JP 10995879 A JP10995879 A JP 10995879A JP S6344293 B2 JPS6344293 B2 JP S6344293B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- contact hole
- phosphorus
- forming
- glass layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10995879A JPS5633844A (en) | 1979-08-28 | 1979-08-28 | Semiconductor device and manufacture therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10995879A JPS5633844A (en) | 1979-08-28 | 1979-08-28 | Semiconductor device and manufacture therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5633844A JPS5633844A (en) | 1981-04-04 |
| JPS6344293B2 true JPS6344293B2 (cg-RX-API-DMAC7.html) | 1988-09-05 |
Family
ID=14523440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10995879A Granted JPS5633844A (en) | 1979-08-28 | 1979-08-28 | Semiconductor device and manufacture therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5633844A (cg-RX-API-DMAC7.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58119611A (ja) * | 1982-01-07 | 1983-07-16 | Mitsubishi Electric Corp | 超電導コイル |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5214367A (en) * | 1975-07-25 | 1977-02-03 | Hitachi Ltd | Semiconductor device on which the phosphosilicate glass layer is formed |
| JPS52131484A (en) * | 1976-04-28 | 1977-11-04 | Hitachi Ltd | Semiconductor device |
| JPS5460558A (en) * | 1977-10-24 | 1979-05-16 | Hitachi Ltd | Electrode forming method |
-
1979
- 1979-08-28 JP JP10995879A patent/JPS5633844A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5633844A (en) | 1981-04-04 |