JPS6337497B2 - - Google Patents

Info

Publication number
JPS6337497B2
JPS6337497B2 JP56212294A JP21229481A JPS6337497B2 JP S6337497 B2 JPS6337497 B2 JP S6337497B2 JP 56212294 A JP56212294 A JP 56212294A JP 21229481 A JP21229481 A JP 21229481A JP S6337497 B2 JPS6337497 B2 JP S6337497B2
Authority
JP
Japan
Prior art keywords
gaas
eutectic
compound semiconductor
film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56212294A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58112336A (ja
Inventor
Aiichiro Nara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56212294A priority Critical patent/JPS58112336A/ja
Publication of JPS58112336A publication Critical patent/JPS58112336A/ja
Publication of JPS6337497B2 publication Critical patent/JPS6337497B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10D64/0116—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
JP56212294A 1981-12-25 1981-12-25 化合物半導体装置の電極形成法 Granted JPS58112336A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56212294A JPS58112336A (ja) 1981-12-25 1981-12-25 化合物半導体装置の電極形成法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56212294A JPS58112336A (ja) 1981-12-25 1981-12-25 化合物半導体装置の電極形成法

Publications (2)

Publication Number Publication Date
JPS58112336A JPS58112336A (ja) 1983-07-04
JPS6337497B2 true JPS6337497B2 (show.php) 1988-07-26

Family

ID=16620197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56212294A Granted JPS58112336A (ja) 1981-12-25 1981-12-25 化合物半導体装置の電極形成法

Country Status (1)

Country Link
JP (1) JPS58112336A (show.php)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03167877A (ja) * 1989-11-28 1991-07-19 Sumitomo Electric Ind Ltd ｎ型立方晶窒化硼素のオーム性電極及びその形成方法
US5240877A (en) * 1989-11-28 1993-08-31 Sumitomo Electric Industries, Ltd. Process for manufacturing an ohmic electrode for n-type cubic boron nitride
US5288456A (en) * 1993-02-23 1994-02-22 International Business Machines Corporation Compound with room temperature electrical resistivity comparable to that of elemental copper

Also Published As

Publication number Publication date
JPS58112336A (ja) 1983-07-04

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