JPS58112336A - 化合物半導体装置の電極形成法 - Google Patents

化合物半導体装置の電極形成法

Info

Publication number
JPS58112336A
JPS58112336A JP56212294A JP21229481A JPS58112336A JP S58112336 A JPS58112336 A JP S58112336A JP 56212294 A JP56212294 A JP 56212294A JP 21229481 A JP21229481 A JP 21229481A JP S58112336 A JPS58112336 A JP S58112336A
Authority
JP
Japan
Prior art keywords
film
gaas
eutectic
compound semiconductor
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56212294A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6337497B2 (show.php
Inventor
Aiichiro Nara
奈良　愛一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56212294A priority Critical patent/JPS58112336A/ja
Publication of JPS58112336A publication Critical patent/JPS58112336A/ja
Publication of JPS6337497B2 publication Critical patent/JPS6337497B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10D64/0116—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
JP56212294A 1981-12-25 1981-12-25 化合物半導体装置の電極形成法 Granted JPS58112336A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56212294A JPS58112336A (ja) 1981-12-25 1981-12-25 化合物半導体装置の電極形成法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56212294A JPS58112336A (ja) 1981-12-25 1981-12-25 化合物半導体装置の電極形成法

Publications (2)

Publication Number Publication Date
JPS58112336A true JPS58112336A (ja) 1983-07-04
JPS6337497B2 JPS6337497B2 (show.php) 1988-07-26

Family

ID=16620197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56212294A Granted JPS58112336A (ja) 1981-12-25 1981-12-25 化合物半導体装置の電極形成法

Country Status (1)

Country Link
JP (1) JPS58112336A (show.php)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5187560A (en) * 1989-11-28 1993-02-16 Sumitomo Electric Industries, Ltd. Ohmic electrode for n-type cubic boron nitride and the process for manufacturing the same
US5240877A (en) * 1989-11-28 1993-08-31 Sumitomo Electric Industries, Ltd. Process for manufacturing an ohmic electrode for n-type cubic boron nitride
US5288456A (en) * 1993-02-23 1994-02-22 International Business Machines Corporation Compound with room temperature electrical resistivity comparable to that of elemental copper

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5187560A (en) * 1989-11-28 1993-02-16 Sumitomo Electric Industries, Ltd. Ohmic electrode for n-type cubic boron nitride and the process for manufacturing the same
US5240877A (en) * 1989-11-28 1993-08-31 Sumitomo Electric Industries, Ltd. Process for manufacturing an ohmic electrode for n-type cubic boron nitride
US5288456A (en) * 1993-02-23 1994-02-22 International Business Machines Corporation Compound with room temperature electrical resistivity comparable to that of elemental copper
US5330592A (en) * 1993-02-23 1994-07-19 International Business Machines Corporation Process of deposition and solid state reaction for making alloyed highly conductive copper germanide

Also Published As

Publication number Publication date
JPS6337497B2 (show.php) 1988-07-26

Similar Documents

Publication Publication Date Title
US5234153A (en) Permanent metallic bonding method
US6140703A (en) Semiconductor metallization structure
DE19734434C1 (de) Halbleiterkörper mit Rückseitenmetallisierung und Verfahren zu deren Herstellung
JPWO1994014190A1 (ja) 半田接合用表面処理構造体及びそれを用いた無フラックス半田付方法
EP0880801B1 (en) DIE ATTACHED SiC AND DIE ATTACH PROCEDURE FOR SiC
JPS58112336A (ja) 化合物半導体装置の電極形成法
JPS58112337A (ja) 化合物半導体装置の製造方法
US4921158A (en) Brazing material
JPS61220344A (ja) 半導体装置の製造方法
US4081824A (en) Ohmic contact to aluminum-containing compound semiconductors
JPS60113954A (ja) 半導体基板とヒ−トシンクとの固着方法
JPS63234562A (ja) 半導体装置の電極
JP4055399B2 (ja) チップ型半導体素子及びその製造方法
JPS6220338A (ja) 半導体装置の製造方法
JPS6016463A (ja) オ−ム性電極
JPS61141155A (ja) はんだ下地電極
JPS635550A (ja) 半導体装置
JPS61121435A (ja) 半導体装置の製造方法
JPH01209730A (ja) 半導体装置の電極構造
JPS63202031A (ja) 半導体装置
JP2003243585A (ja) チップ型半導体素子およびその製造方法
JPS62169429A (ja) 半導体装置およびその製造方法
JPS5845814B2 (ja) 積層金属電極を有する半導体装置
JPS62260364A (ja) 金属積層体及びその製造方法
JPH0677262A (ja) 化合物半導体装置