JPS63308385A - 埋込みゲ−ト型電界効果トランジスタの製造方法 - Google Patents

埋込みゲ−ト型電界効果トランジスタの製造方法

Info

Publication number
JPS63308385A
JPS63308385A JP62144542A JP14454287A JPS63308385A JP S63308385 A JPS63308385 A JP S63308385A JP 62144542 A JP62144542 A JP 62144542A JP 14454287 A JP14454287 A JP 14454287A JP S63308385 A JPS63308385 A JP S63308385A
Authority
JP
Japan
Prior art keywords
source
buried gate
manufacturing
gate
drain regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62144542A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0565063B2 (enrdf_load_stackoverflow
Inventor
Toshio Komori
古森　敏夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP62144542A priority Critical patent/JPS63308385A/ja
Publication of JPS63308385A publication Critical patent/JPS63308385A/ja
Publication of JPH0565063B2 publication Critical patent/JPH0565063B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP62144542A 1987-06-10 1987-06-10 埋込みゲ−ト型電界効果トランジスタの製造方法 Granted JPS63308385A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62144542A JPS63308385A (ja) 1987-06-10 1987-06-10 埋込みゲ−ト型電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62144542A JPS63308385A (ja) 1987-06-10 1987-06-10 埋込みゲ−ト型電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS63308385A true JPS63308385A (ja) 1988-12-15
JPH0565063B2 JPH0565063B2 (enrdf_load_stackoverflow) 1993-09-16

Family

ID=15364720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62144542A Granted JPS63308385A (ja) 1987-06-10 1987-06-10 埋込みゲ−ト型電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS63308385A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001097290A3 (en) * 2000-06-16 2002-08-15 Advanced Micro Devices Inc Buried inverted gate field-effect transistor (bigfet)
CN107464746A (zh) * 2016-06-06 2017-12-12 格罗方德半导体公司 用于半导体装置的阈值电压及井植入方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001097290A3 (en) * 2000-06-16 2002-08-15 Advanced Micro Devices Inc Buried inverted gate field-effect transistor (bigfet)
CN107464746A (zh) * 2016-06-06 2017-12-12 格罗方德半导体公司 用于半导体装置的阈值电压及井植入方法
CN107464746B (zh) * 2016-06-06 2020-10-13 格罗方德半导体公司 用于半导体装置的阈值电压及井植入方法

Also Published As

Publication number Publication date
JPH0565063B2 (enrdf_load_stackoverflow) 1993-09-16

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