JPS63300563A - Ｍｏｓ電界効果トランジスタの製造方法 - Google Patents

Ｍｏｓ電界効果トランジスタの製造方法

Info

Publication number
JPS63300563A
JPS63300563A JP62137226A JP13722687A JPS63300563A JP S63300563 A JPS63300563 A JP S63300563A JP 62137226 A JP62137226 A JP 62137226A JP 13722687 A JP13722687 A JP 13722687A JP S63300563 A JPS63300563 A JP S63300563A
Authority
JP
Japan
Prior art keywords
layer
forming
region
insulating film
photoresist layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62137226A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0561776B2 (enExample
Inventor
Takayuki Mizuta
水田　高之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62137226A priority Critical patent/JPS63300563A/ja
Publication of JPS63300563A publication Critical patent/JPS63300563A/ja
Publication of JPH0561776B2 publication Critical patent/JPH0561776B2/ja
Granted legal-status Critical Current

Links

JP62137226A 1987-05-29 1987-05-29 Ｍｏｓ電界効果トランジスタの製造方法 Granted JPS63300563A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62137226A JPS63300563A (ja) 1987-05-29 1987-05-29 Ｍｏｓ電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62137226A JPS63300563A (ja) 1987-05-29 1987-05-29 Ｍｏｓ電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS63300563A true JPS63300563A (ja) 1988-12-07
JPH0561776B2 JPH0561776B2 (enExample) 1993-09-07

Family

ID=15193728

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62137226A Granted JPS63300563A (ja) 1987-05-29 1987-05-29 Ｍｏｓ電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS63300563A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06216156A (ja) * 1993-01-18 1994-08-05 Semiconductor Energy Lab Co Ltd Ｍｉｓ型半導体装置とその作製方法
JP2000004025A (ja) * 1999-06-02 2000-01-07 Semiconductor Energy Lab Co Ltd Ｍｉｓ型半導体装置とその作製方法
KR100317642B1 (ko) * 1999-05-27 2001-12-22 구본준, 론 위라하디락사 금속 도금을 이용한 박막트랜지스터의 제조방법
US6984551B2 (en) 1993-01-18 2006-01-10 Semiconductor Energy Laboratory Co., Ltd. MIS semiconductor device and method of fabricating the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06216156A (ja) * 1993-01-18 1994-08-05 Semiconductor Energy Lab Co Ltd Ｍｉｓ型半導体装置とその作製方法
US6984551B2 (en) 1993-01-18 2006-01-10 Semiconductor Energy Laboratory Co., Ltd. MIS semiconductor device and method of fabricating the same
US7351624B2 (en) 1993-01-18 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. MIS semiconductor device and method of fabricating the same
KR100317642B1 (ko) * 1999-05-27 2001-12-22 구본준, 론 위라하디락사 금속 도금을 이용한 박막트랜지스터의 제조방법
JP2000004025A (ja) * 1999-06-02 2000-01-07 Semiconductor Energy Lab Co Ltd Ｍｉｓ型半導体装置とその作製方法

Also Published As

Publication number Publication date
JPH0561776B2 (enExample) 1993-09-07

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