JPH0561776B2 - - Google Patents

Info

Publication number
JPH0561776B2
JPH0561776B2 JP62137226A JP13722687A JPH0561776B2 JP H0561776 B2 JPH0561776 B2 JP H0561776B2 JP 62137226 A JP62137226 A JP 62137226A JP 13722687 A JP13722687 A JP 13722687A JP H0561776 B2 JPH0561776 B2 JP H0561776B2
Authority
JP
Japan
Prior art keywords
insulating film
forming
electroless plating
layer
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62137226A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63300563A (ja
Inventor
Takayuki Mizuta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP62137226A priority Critical patent/JPS63300563A/ja
Publication of JPS63300563A publication Critical patent/JPS63300563A/ja
Publication of JPH0561776B2 publication Critical patent/JPH0561776B2/ja
Granted legal-status Critical Current

Links

JP62137226A 1987-05-29 1987-05-29 Ｍｏｓ電界効果トランジスタの製造方法 Granted JPS63300563A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62137226A JPS63300563A (ja) 1987-05-29 1987-05-29 Ｍｏｓ電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62137226A JPS63300563A (ja) 1987-05-29 1987-05-29 Ｍｏｓ電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS63300563A JPS63300563A (ja) 1988-12-07
JPH0561776B2 true JPH0561776B2 (enExample) 1993-09-07

Family

ID=15193728

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62137226A Granted JPS63300563A (ja) 1987-05-29 1987-05-29 Ｍｏｓ電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS63300563A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW425637B (en) 1993-01-18 2001-03-11 Semiconductor Energy Lab Method of fabricating mis semiconductor device
JP3352744B2 (ja) * 1993-01-18 2002-12-03 株式会社半導体エネルギー研究所 Ｍｉｓ型半導体装置の作製方法
KR100317642B1 (ko) * 1999-05-27 2001-12-22 구본준, 론 위라하디락사 금속 도금을 이용한 박막트랜지스터의 제조방법
JP3352975B2 (ja) * 1999-06-02 2002-12-03 株式会社半導体エネルギー研究所 Ｍｉｓ型半導体装置の作製方法

Also Published As

Publication number Publication date
JPS63300563A (ja) 1988-12-07

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