JPS63292679A - Manufacture of mos transistor - Google Patents
Manufacture of mos transistorInfo
- Publication number
- JPS63292679A JPS63292679A JP12782587A JP12782587A JPS63292679A JP S63292679 A JPS63292679 A JP S63292679A JP 12782587 A JP12782587 A JP 12782587A JP 12782587 A JP12782587 A JP 12782587A JP S63292679 A JPS63292679 A JP S63292679A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- sidewall layer
- diffused region
- forming
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910021332 silicide Inorganic materials 0.000 abstract 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
Abstract
PURPOSE: To suppress the injection of hot carriers into a sidewall layer and to obtain a highly reliable MOS transistor, by forming a first diffused region in a substrate, forming a first sidewall layer comprising an insulating film, forming a metal silicide layer on a gate electrode and the first diffused region, and forming a second sidewall layer furthermore.
CONSTITUTION: A shallow low concentration diffused region 5 is formed in a substrate 1 by ion implantation and the like, Thereafter, a thin insulating film 9 is formed on the entire surface. The insulating film 9 is etched by RIE. A first sidewall layer 9 is made to remain on the side surfaces of a gate electrode 2 and a gate insulating film 3. Then, heat treatment is performed, and a metal silicide layer 7 are formed on the part of the gate electrode 2 (only in the case of polysilicon) and source and drain regions 10 and 11. Thereafter, the metal at a non-reacted part is removed. An insulating film is formed. RIE is carried out immediately, and a second sidewall layer 8 is formed on the side surface of the first sidewall layer 9. A deep high-concentration diffused region 4 (second diffused region) is formed in the substrate 1.
COPYRIGHT: (C)1988,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12782587A JPS63292679A (en) | 1987-05-25 | 1987-05-25 | Manufacture of mos transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12782587A JPS63292679A (en) | 1987-05-25 | 1987-05-25 | Manufacture of mos transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63292679A true JPS63292679A (en) | 1988-11-29 |
Family
ID=14969601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12782587A Pending JPS63292679A (en) | 1987-05-25 | 1987-05-25 | Manufacture of mos transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63292679A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04147629A (en) * | 1990-10-09 | 1992-05-21 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
| US6506651B2 (en) | 1999-07-26 | 2003-01-14 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and manufacturing method thereof |
-
1987
- 1987-05-25 JP JP12782587A patent/JPS63292679A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04147629A (en) * | 1990-10-09 | 1992-05-21 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
| US6506651B2 (en) | 1999-07-26 | 2003-01-14 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and manufacturing method thereof |
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