JPS632885B2 - - Google Patents
Info
- Publication number
- JPS632885B2 JPS632885B2 JP4012678A JP4012678A JPS632885B2 JP S632885 B2 JPS632885 B2 JP S632885B2 JP 4012678 A JP4012678 A JP 4012678A JP 4012678 A JP4012678 A JP 4012678A JP S632885 B2 JPS632885 B2 JP S632885B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- gas
- powder
- reaction
- nitride powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000843 powder Substances 0.000 claims description 44
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 31
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 31
- 238000006243 chemical reaction Methods 0.000 claims description 30
- 239000007789 gas Substances 0.000 claims description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 239000012298 atmosphere Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 238000000034 method Methods 0.000 description 11
- 239000002245 particle Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- QYKABQMBXCBINA-UHFFFAOYSA-N 4-(oxan-2-yloxy)benzaldehyde Chemical compound C1=CC(C=O)=CC=C1OC1OCCCC1 QYKABQMBXCBINA-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- -1 nitrogen nitride Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4012678A JPS54132500A (en) | 1978-04-05 | 1978-04-05 | Manufacture of silicon nitride powder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4012678A JPS54132500A (en) | 1978-04-05 | 1978-04-05 | Manufacture of silicon nitride powder |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54132500A JPS54132500A (en) | 1979-10-15 |
| JPS632885B2 true JPS632885B2 (en, 2012) | 1988-01-21 |
Family
ID=12572115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4012678A Granted JPS54132500A (en) | 1978-04-05 | 1978-04-05 | Manufacture of silicon nitride powder |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54132500A (en, 2012) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5913611A (ja) * | 1982-07-08 | 1984-01-24 | Fumio Hori | Ｓｉ↓３Ｎ↓４の超微粉の製造方法ならびに製造装置 |
| JPS60200813A (ja) * | 1984-03-22 | 1985-10-11 | Mitsubishi Gas Chem Co Inc | 窒化珪素と炭化珪素との複合微粉末の製造方法 |
| JPS60235707A (ja) * | 1984-05-08 | 1985-11-22 | Mitsubishi Gas Chem Co Inc | 複合微粉末の製造方法 |
| DE3536933A1 (de) * | 1985-10-17 | 1987-04-23 | Bayer Ag | Verbessertes siliciumnitrid und verfahren zu dessen herstellung |
| US5176893A (en) * | 1989-10-02 | 1993-01-05 | Phillips Petroleum Company | Silicon nitride products and method for their production |
| GB9306802D0 (en) * | 1993-04-01 | 1993-05-26 | Tioxide Specialties Ltd | Process for the production of silicon nitride |
| KR101574888B1 (ko) * | 2014-04-14 | 2015-12-07 | 오씨아이 주식회사 | 입자크기의 균일도를 향상시킨 연속식 질화규소 제조장치 및 제조방법 |
-
1978
- 1978-04-05 JP JP4012678A patent/JPS54132500A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54132500A (en) | 1979-10-15 |
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