JPS6327846B2 - - Google Patents

Info

Publication number
JPS6327846B2
JPS6327846B2 JP57189097A JP18909782A JPS6327846B2 JP S6327846 B2 JPS6327846 B2 JP S6327846B2 JP 57189097 A JP57189097 A JP 57189097A JP 18909782 A JP18909782 A JP 18909782A JP S6327846 B2 JPS6327846 B2 JP S6327846B2
Authority
JP
Japan
Prior art keywords
film
annealing
semiconductor substrate
furnace
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57189097A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5979522A (ja
Inventor
Hiroshi Matsui
Yutaka Yuge
Tomoaki Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP18909782A priority Critical patent/JPS5979522A/ja
Publication of JPS5979522A publication Critical patent/JPS5979522A/ja
Publication of JPS6327846B2 publication Critical patent/JPS6327846B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
JP18909782A 1982-10-29 1982-10-29 半導体装置の製造方法 Granted JPS5979522A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18909782A JPS5979522A (ja) 1982-10-29 1982-10-29 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18909782A JPS5979522A (ja) 1982-10-29 1982-10-29 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5979522A JPS5979522A (ja) 1984-05-08
JPS6327846B2 true JPS6327846B2 (enrdf_load_stackoverflow) 1988-06-06

Family

ID=16235291

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18909782A Granted JPS5979522A (ja) 1982-10-29 1982-10-29 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5979522A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04105034A (ja) * 1990-08-24 1992-04-07 Matsushita Electric Ind Co Ltd 圧電型圧力センサ

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60249319A (ja) * 1984-05-24 1985-12-10 Mitsubishi Electric Corp 半導体装置の製造方法
JPS62188374A (ja) * 1986-02-14 1987-08-17 Fuji Electric Co Ltd 絶縁ゲ−ト電界効果トランジスタの製造方法
JPS63114121A (ja) * 1986-07-07 1988-05-19 Nec Corp 半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5927524A (ja) * 1982-08-07 1984-02-14 Mitsubishi Electric Corp 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04105034A (ja) * 1990-08-24 1992-04-07 Matsushita Electric Ind Co Ltd 圧電型圧力センサ

Also Published As

Publication number Publication date
JPS5979522A (ja) 1984-05-08

Similar Documents

Publication Publication Date Title
US5324974A (en) Nitride capped MOSFET for integrated circuits
EP1361614B1 (en) Semiconductor device manufacturing method
EP0116317B1 (en) Method for producing a semiconductor device comprising an oxidation step
US4273805A (en) Passivating composite for a semiconductor device comprising a silicon nitride (Si1 3N4) layer and phosphosilicate glass (PSG) layer
KR970000703B1 (ko) 반도체 장치의 제조 방법
JPS6072272A (ja) 半導体装置の製造方法
JPH10209168A (ja) 半導体装置の製造方法
EP0704892A2 (en) Process for producing semiconductor substrate
JPH0126171B2 (enrdf_load_stackoverflow)
JPS6327846B2 (enrdf_load_stackoverflow)
JPH0227769A (ja) 半導体装置
JPH01760A (ja) 半導体装置の製造方法
JP2534608B2 (ja) 半導体装置の製造方法
JPS6263475A (ja) 半導体装置
JPS6068656A (ja) 半導体装置の製造方法
JPH053172A (ja) 半導体装置及びその製造方法
JPS6149428A (ja) 半導体装置の製造方法
JPS592320A (ja) 半導体装置の製造方法
JPH0442938A (ja) 半導体装置の製造方法
JPH04137632A (ja) 半導体装置の製造方法
JPH0227770A (ja) 半導体装置の製造方法
JPS62193166A (ja) 相補型ｍｉｓ集積回路のウエル形成方法
JPS60193330A (ja) 半導体への不純物拡散方法
JPH0494120A (ja) 半導体装置の製造方法
JPH01173727A (ja) 半導体装置の製造方法