JPS5979522A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS5979522A JPS5979522A JP18909782A JP18909782A JPS5979522A JP S5979522 A JPS5979522 A JP S5979522A JP 18909782 A JP18909782 A JP 18909782A JP 18909782 A JP18909782 A JP 18909782A JP S5979522 A JPS5979522 A JP S5979522A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- annealing
- implanted
- type impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000000137 annealing Methods 0.000 claims abstract description 21
- 239000012535 impurity Substances 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 8
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 8
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 8
- 239000012298 atmosphere Substances 0.000 claims abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 7
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 21
- 238000005468 ion implantation Methods 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims 2
- 229910001882 dioxygen Inorganic materials 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 abstract description 19
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 238000002513 implantation Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910005091 Si3N Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18909782A JPS5979522A (ja) | 1982-10-29 | 1982-10-29 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18909782A JPS5979522A (ja) | 1982-10-29 | 1982-10-29 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5979522A true JPS5979522A (ja) | 1984-05-08 |
| JPS6327846B2 JPS6327846B2 (enrdf_load_stackoverflow) | 1988-06-06 |
Family
ID=16235291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18909782A Granted JPS5979522A (ja) | 1982-10-29 | 1982-10-29 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5979522A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60249319A (ja) * | 1984-05-24 | 1985-12-10 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS62188374A (ja) * | 1986-02-14 | 1987-08-17 | Fuji Electric Co Ltd | 絶縁ゲ−ト電界効果トランジスタの製造方法 |
| JPS63114121A (ja) * | 1986-07-07 | 1988-05-19 | Nec Corp | 半導体装置の製造方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04105034A (ja) * | 1990-08-24 | 1992-04-07 | Matsushita Electric Ind Co Ltd | 圧電型圧力センサ |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5927524A (ja) * | 1982-08-07 | 1984-02-14 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
-
1982
- 1982-10-29 JP JP18909782A patent/JPS5979522A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5927524A (ja) * | 1982-08-07 | 1984-02-14 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60249319A (ja) * | 1984-05-24 | 1985-12-10 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS62188374A (ja) * | 1986-02-14 | 1987-08-17 | Fuji Electric Co Ltd | 絶縁ゲ−ト電界効果トランジスタの製造方法 |
| JPS63114121A (ja) * | 1986-07-07 | 1988-05-19 | Nec Corp | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6327846B2 (enrdf_load_stackoverflow) | 1988-06-06 |
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