JPS63271970A - 炭化珪素mis構造 - Google Patents
炭化珪素mis構造Info
- Publication number
- JPS63271970A JPS63271970A JP62105613A JP10561387A JPS63271970A JP S63271970 A JPS63271970 A JP S63271970A JP 62105613 A JP62105613 A JP 62105613A JP 10561387 A JP10561387 A JP 10561387A JP S63271970 A JPS63271970 A JP S63271970A
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- mis structure
- semiconductor
- single crystal
- mis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/602—Heterojunction gate electrodes for FETs
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62105613A JPS63271970A (ja) | 1987-04-28 | 1987-04-28 | 炭化珪素mis構造 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62105613A JPS63271970A (ja) | 1987-04-28 | 1987-04-28 | 炭化珪素mis構造 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63271970A true JPS63271970A (ja) | 1988-11-09 |
| JPH0556024B2 JPH0556024B2 (cg-RX-API-DMAC7.html) | 1993-08-18 |
Family
ID=14412349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62105613A Granted JPS63271970A (ja) | 1987-04-28 | 1987-04-28 | 炭化珪素mis構造 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63271970A (cg-RX-API-DMAC7.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5049950A (en) * | 1987-07-14 | 1991-09-17 | Sharp Kabushiki Kaisha | MIS structure photosensor |
-
1987
- 1987-04-28 JP JP62105613A patent/JPS63271970A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5049950A (en) * | 1987-07-14 | 1991-09-17 | Sharp Kabushiki Kaisha | MIS structure photosensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0556024B2 (cg-RX-API-DMAC7.html) | 1993-08-18 |
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