JPH0556024B2 - - Google Patents

Info

Publication number
JPH0556024B2
JPH0556024B2 JP62105613A JP10561387A JPH0556024B2 JP H0556024 B2 JPH0556024 B2 JP H0556024B2 JP 62105613 A JP62105613 A JP 62105613A JP 10561387 A JP10561387 A JP 10561387A JP H0556024 B2 JPH0556024 B2 JP H0556024B2
Authority
JP
Japan
Prior art keywords
silicon carbide
single crystal
semiconductor
mos
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62105613A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63271970A (ja
Inventor
Atsuko Uemoto
Akira Suzuki
Masaki Furukawa
Akitsugu Hatano
Mitsuhiro Shigeta
Yoshihisa Fujii
Kenji Nakanishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP62105613A priority Critical patent/JPS63271970A/ja
Publication of JPS63271970A publication Critical patent/JPS63271970A/ja
Publication of JPH0556024B2 publication Critical patent/JPH0556024B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/602—Heterojunction gate electrodes for FETs
JP62105613A 1987-04-28 1987-04-28 炭化珪素ｍｉｓ構造 Granted JPS63271970A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62105613A JPS63271970A (ja) 1987-04-28 1987-04-28 炭化珪素ｍｉｓ構造

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62105613A JPS63271970A (ja) 1987-04-28 1987-04-28 炭化珪素ｍｉｓ構造

Publications (2)

Publication Number Publication Date
JPS63271970A JPS63271970A (ja) 1988-11-09
JPH0556024B2 true JPH0556024B2 (cg-RX-API-DMAC7.html) 1993-08-18

Family

ID=14412349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62105613A Granted JPS63271970A (ja) 1987-04-28 1987-04-28 炭化珪素ｍｉｓ構造

Country Status (1)

Country Link
JP (1) JPS63271970A (cg-RX-API-DMAC7.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6418278A (en) * 1987-07-14 1989-01-23 Sharp Kk Mis structure photosensor

Also Published As

Publication number Publication date
JPS63271970A (ja) 1988-11-09

Similar Documents

Publication Publication Date Title
US3617824A (en) Mos device with a metal-silicide gate
US3375418A (en) S-m-s device with partial semiconducting layers
JPS6128232B2 (cg-RX-API-DMAC7.html)
JPH03263872A (ja) Ｍｉｓ型ダイヤモンド電界効果トランジスタ
JPH055182B2 (cg-RX-API-DMAC7.html)
US4238762A (en) Electrically isolated semiconductor devices on common crystalline substrate
JPH0556024B2 (cg-RX-API-DMAC7.html)
JPS60176281A (ja) ショットキ障壁ダイオードの製造方法
JPH02130961A (ja) 電界効果型トランジスタ
JPH01243572A (ja) 相補型薄膜トランジスタ及びその製造方法
JPS63262871A (ja) 炭化珪素ｍｏｓ構造及びその製造方法
JP2001110915A (ja) 抵抗の製造方法
JPH08195486A (ja) ダイヤモンド電子素子
JPH07245409A (ja) 半導体装置
JPS5984570A (ja) 半導体装置用キヤパシタの製造方法
JPS6298747A (ja) 半導体装置の製造方法
JPS60240123A (ja) 半導体装置の製造方法
JPS61218144A (ja) 電極・配線構造
JPS6227547B2 (cg-RX-API-DMAC7.html)
JPH05160386A (ja) ダイヤモンド・ダイオードおよびその製造方法
JP3343282B2 (ja) 混成集積回路部品
JPS61276256A (ja) 半導体装置
TW381330B (en) Method of forming cooling system on wafer back
JPWO2024154358A5 (cg-RX-API-DMAC7.html)
JPS6240757A (ja) 半導体装置