JPS6323666B2 - - Google Patents

Info

Publication number
JPS6323666B2
JPS6323666B2 JP58038166A JP3816683A JPS6323666B2 JP S6323666 B2 JPS6323666 B2 JP S6323666B2 JP 58038166 A JP58038166 A JP 58038166A JP 3816683 A JP3816683 A JP 3816683A JP S6323666 B2 JPS6323666 B2 JP S6323666B2
Authority
JP
Japan
Prior art keywords
insulating film
compound semiconductor
active region
mask
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58038166A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59165461A (ja
Inventor
Yasuhiro Ishii
Yoshimoto Fujita
Kazumasa Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP58038166A priority Critical patent/JPS59165461A/ja
Publication of JPS59165461A publication Critical patent/JPS59165461A/ja
Publication of JPS6323666B2 publication Critical patent/JPS6323666B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
JP58038166A 1983-03-10 1983-03-10 ショットキ接合形化合物半導体電界効果トランジスタの製造方法 Granted JPS59165461A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58038166A JPS59165461A (ja) 1983-03-10 1983-03-10 ショットキ接合形化合物半導体電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58038166A JPS59165461A (ja) 1983-03-10 1983-03-10 ショットキ接合形化合物半導体電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS59165461A JPS59165461A (ja) 1984-09-18
JPS6323666B2 true JPS6323666B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-05-17

Family

ID=12517812

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58038166A Granted JPS59165461A (ja) 1983-03-10 1983-03-10 ショットキ接合形化合物半導体電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS59165461A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3509963A1 (de) * 1985-03-20 1986-09-25 Standard Elektrik Lorenz Ag, 7000 Stuttgart Junction-feldeffekttransistor mit selbstjustierendem gate
JPH0758715B2 (ja) * 1985-08-14 1995-06-21 日本電気株式会社 電界効果トランジスタの製造方法
JPH0758716B2 (ja) * 1985-09-10 1995-06-21 松下電器産業株式会社 電界効果トランジスタの製造方法
KR100434698B1 (ko) 2001-09-05 2004-06-07 주식회사 하이닉스반도체 반도체소자의 선택적 에피성장법
KR100455724B1 (ko) 2001-10-08 2004-11-12 주식회사 하이닉스반도체 반도체소자의 플러그 형성방법
KR100455725B1 (ko) 2001-10-08 2004-11-12 주식회사 하이닉스반도체 반도체소자의 플러그 형성방법
KR100431295B1 (ko) 2001-10-12 2004-05-12 주식회사 하이닉스반도체 반도체소자의 플러그 형성방법
KR102257570B1 (ko) * 2014-08-13 2021-05-31 인텔 코포레이션 자기 정렬 게이트 최종 ⅲ-n 트랜지스터

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5644582B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-08-13 1981-10-20
FR2496982A1 (fr) * 1980-12-24 1982-06-25 Labo Electronique Physique Procede de fabrication de transistors a effet de champ, a grille auto-alignee, et transistors ainsi obtenus

Also Published As

Publication number Publication date
JPS59165461A (ja) 1984-09-18

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