JPS6323665B2 - - Google Patents

Info

Publication number
JPS6323665B2
JPS6323665B2 JP58000899A JP89983A JPS6323665B2 JP S6323665 B2 JPS6323665 B2 JP S6323665B2 JP 58000899 A JP58000899 A JP 58000899A JP 89983 A JP89983 A JP 89983A JP S6323665 B2 JPS6323665 B2 JP S6323665B2
Authority
JP
Japan
Prior art keywords
semiconductor substrate
gate electrode
effect transistor
field effect
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58000899A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59126676A (ja
Inventor
Hirobumi Mizuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58000899A priority Critical patent/JPS59126676A/ja
Publication of JPS59126676A publication Critical patent/JPS59126676A/ja
Publication of JPS6323665B2 publication Critical patent/JPS6323665B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58000899A 1983-01-07 1983-01-07 電界効果型トランジスタ Granted JPS59126676A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58000899A JPS59126676A (ja) 1983-01-07 1983-01-07 電界効果型トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58000899A JPS59126676A (ja) 1983-01-07 1983-01-07 電界効果型トランジスタ

Publications (2)

Publication Number Publication Date
JPS59126676A JPS59126676A (ja) 1984-07-21
JPS6323665B2 true JPS6323665B2 (en, 2012) 1988-05-17

Family

ID=11486527

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58000899A Granted JPS59126676A (ja) 1983-01-07 1983-01-07 電界効果型トランジスタ

Country Status (1)

Country Link
JP (1) JPS59126676A (en, 2012)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07120674B2 (ja) * 1986-06-17 1995-12-20 日本電気株式会社 電界効果形トランジスタ
KR920009718B1 (ko) * 1987-08-10 1992-10-22 스미도모덴기고오교오 가부시기가이샤 화합물반도체장치 및 그 제조방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53135582A (en) * 1977-04-30 1978-11-27 Fujitsu Ltd Semiconductor device and its manufacture

Also Published As

Publication number Publication date
JPS59126676A (ja) 1984-07-21

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term