JPS6252957B2 - - Google Patents

Info

Publication number
JPS6252957B2
JPS6252957B2 JP55014530A JP1453080A JPS6252957B2 JP S6252957 B2 JPS6252957 B2 JP S6252957B2 JP 55014530 A JP55014530 A JP 55014530A JP 1453080 A JP1453080 A JP 1453080A JP S6252957 B2 JPS6252957 B2 JP S6252957B2
Authority
JP
Japan
Prior art keywords
gate electrode
source
electrode
gate
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55014530A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56112759A (en
Inventor
Yoichi Aono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP1453080A priority Critical patent/JPS56112759A/ja
Publication of JPS56112759A publication Critical patent/JPS56112759A/ja
Publication of JPS6252957B2 publication Critical patent/JPS6252957B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/80FETs having rectifying junction gate electrodes
    • H10D30/87FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/877FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having recessed gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP1453080A 1980-02-08 1980-02-08 Formation of gate electrode Granted JPS56112759A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1453080A JPS56112759A (en) 1980-02-08 1980-02-08 Formation of gate electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1453080A JPS56112759A (en) 1980-02-08 1980-02-08 Formation of gate electrode

Publications (2)

Publication Number Publication Date
JPS56112759A JPS56112759A (en) 1981-09-05
JPS6252957B2 true JPS6252957B2 (en, 2012) 1987-11-07

Family

ID=11863689

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1453080A Granted JPS56112759A (en) 1980-02-08 1980-02-08 Formation of gate electrode

Country Status (1)

Country Link
JP (1) JPS56112759A (en, 2012)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59147466A (ja) * 1983-02-10 1984-08-23 Sony Corp シヨツトキ・バリア・ゲ−ト型fet
JPS59175773A (ja) * 1983-03-26 1984-10-04 Mitsubishi Electric Corp 電界効果トランジスタ
JPS59224175A (ja) * 1983-06-03 1984-12-17 Nec Corp 電界効果トランジスタ
JPH06260507A (ja) * 1993-03-05 1994-09-16 Mitsubishi Electric Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPS56112759A (en) 1981-09-05

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