JPH0523496B2 - - Google Patents
Info
- Publication number
- JPH0523496B2 JPH0523496B2 JP1945386A JP1945386A JPH0523496B2 JP H0523496 B2 JPH0523496 B2 JP H0523496B2 JP 1945386 A JP1945386 A JP 1945386A JP 1945386 A JP1945386 A JP 1945386A JP H0523496 B2 JPH0523496 B2 JP H0523496B2
- Authority
- JP
- Japan
- Prior art keywords
- forming
- active layer
- source
- layer
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002184 metal Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 230000005669 field effect Effects 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 18
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1945386A JPS62177971A (ja) | 1986-01-30 | 1986-01-30 | 電界効果トランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1945386A JPS62177971A (ja) | 1986-01-30 | 1986-01-30 | 電界効果トランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62177971A JPS62177971A (ja) | 1987-08-04 |
| JPH0523496B2 true JPH0523496B2 (en, 2012) | 1993-04-02 |
Family
ID=11999737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1945386A Granted JPS62177971A (ja) | 1986-01-30 | 1986-01-30 | 電界効果トランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62177971A (en, 2012) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100511905B1 (ko) * | 1999-12-02 | 2005-09-02 | 주식회사 하이닉스반도체 | 반도체 디바이스 및 그 제조방법 |
-
1986
- 1986-01-30 JP JP1945386A patent/JPS62177971A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62177971A (ja) | 1987-08-04 |
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