JPH0563946B2 - - Google Patents

Info

Publication number
JPH0563946B2
JPH0563946B2 JP58066429A JP6642983A JPH0563946B2 JP H0563946 B2 JPH0563946 B2 JP H0563946B2 JP 58066429 A JP58066429 A JP 58066429A JP 6642983 A JP6642983 A JP 6642983A JP H0563946 B2 JPH0563946 B2 JP H0563946B2
Authority
JP
Japan
Prior art keywords
layer
semiconductor layer
grown
gate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58066429A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59193063A (ja
Inventor
Keiichi Oohata
Tomohiro Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58066429A priority Critical patent/JPS59193063A/ja
Publication of JPS59193063A publication Critical patent/JPS59193063A/ja
Publication of JPH0563946B2 publication Critical patent/JPH0563946B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP58066429A 1983-04-15 1983-04-15 電界効果トランジスタの製造方法 Granted JPS59193063A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58066429A JPS59193063A (ja) 1983-04-15 1983-04-15 電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58066429A JPS59193063A (ja) 1983-04-15 1983-04-15 電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS59193063A JPS59193063A (ja) 1984-11-01
JPH0563946B2 true JPH0563946B2 (en, 2012) 1993-09-13

Family

ID=13315524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58066429A Granted JPS59193063A (ja) 1983-04-15 1983-04-15 電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS59193063A (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013122176A1 (ja) * 2012-02-16 2013-08-22 ソニー株式会社 半導体装置および半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013122176A1 (ja) * 2012-02-16 2013-08-22 ソニー株式会社 半導体装置および半導体装置の製造方法
JP2013191828A (ja) * 2012-02-16 2013-09-26 Sony Corp 半導体装置および半導体装置の製造方法

Also Published As

Publication number Publication date
JPS59193063A (ja) 1984-11-01

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