JPS63234561A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS63234561A JPS63234561A JP6951787A JP6951787A JPS63234561A JP S63234561 A JPS63234561 A JP S63234561A JP 6951787 A JP6951787 A JP 6951787A JP 6951787 A JP6951787 A JP 6951787A JP S63234561 A JPS63234561 A JP S63234561A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- junctions
- depletion layer
- depletion
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 230000005684 electric field Effects 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 17
- 230000015556 catabolic process Effects 0.000 abstract description 14
- 230000003190 augmentative effect Effects 0.000 abstract 2
- 230000002040 relaxant effect Effects 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 80
- 239000012535 impurity Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6951787A JPS63234561A (ja) | 1987-03-24 | 1987-03-24 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6951787A JPS63234561A (ja) | 1987-03-24 | 1987-03-24 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63234561A true JPS63234561A (ja) | 1988-09-29 |
| JPH0567054B2 JPH0567054B2 (US07714131-20100511-C00038.png) | 1993-09-24 |
Family
ID=13404998
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6951787A Granted JPS63234561A (ja) | 1987-03-24 | 1987-03-24 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63234561A (US07714131-20100511-C00038.png) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0353564A (ja) * | 1989-07-21 | 1991-03-07 | Nec Corp | 高耐圧ｍｏｓ型半導体装置 |
-
1987
- 1987-03-24 JP JP6951787A patent/JPS63234561A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0353564A (ja) * | 1989-07-21 | 1991-03-07 | Nec Corp | 高耐圧ｍｏｓ型半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0567054B2 (US07714131-20100511-C00038.png) | 1993-09-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |