JPS63191647U - - Google Patents
Info
- Publication number
- JPS63191647U JPS63191647U JP1987082912U JP8291287U JPS63191647U JP S63191647 U JPS63191647 U JP S63191647U JP 1987082912 U JP1987082912 U JP 1987082912U JP 8291287 U JP8291287 U JP 8291287U JP S63191647 U JPS63191647 U JP S63191647U
- Authority
- JP
- Japan
- Prior art keywords
- lead
- semiconductor chip
- insulating layer
- insulator
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims 7
- 239000012212 insulator Substances 0.000 claims 1
- 229920001721 polyimide Polymers 0.000 claims 1
- 239000009719 polyimide resin Substances 0.000 claims 1
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Description
第1図は本考案の実施例に係わる発光ダイオー
ドの断面図、第2図は第1図の発光ダイオードの
樹脂封止体を設ける前の状態を示す斜視図、第3
図は第1図の発光ダイオードを回路基板に取り付
けた状態を示す断面図、第4図は従来の発光ダイ
オードを示す断面図、第5図は第4図の発光ダイ
オードを回路基板に取り付けた状態を示す断面図
、第6図は本考案の別の実施例の発光ダイオード
を示す断面図である。 1……発光ダイオードチツプ、2,3……電極
、5……第1のリード、6……第2のリード、7
……リード細線、8……樹脂封止体、9……回路
基板、12……絶縁層。
ドの断面図、第2図は第1図の発光ダイオードの
樹脂封止体を設ける前の状態を示す斜視図、第3
図は第1図の発光ダイオードを回路基板に取り付
けた状態を示す断面図、第4図は従来の発光ダイ
オードを示す断面図、第5図は第4図の発光ダイ
オードを回路基板に取り付けた状態を示す断面図
、第6図は本考案の別の実施例の発光ダイオード
を示す断面図である。 1……発光ダイオードチツプ、2,3……電極
、5……第1のリード、6……第2のリード、7
……リード細線、8……樹脂封止体、9……回路
基板、12……絶縁層。
Claims (1)
- 【実用新案登録請求の範囲】 〔1〕 一方及び他方の主面に電極2,3をそれ
ぞれ有する半導体ツプ1と、 前記半導体チツプ1の前記一方の主面の電極2
に電気的及び機械的に結合されている第1のリー
ド5と、 前記第1のリード5に絶縁層12又は絶縁層1
2と変形し難い中間部材15との組み合わせを介
して固着され、前記第1のリード5とは反対の方
向に導出されている第2のリード6と、 前記半導体チツプ1の前記他方の主面に電極3
を前記第2のリード6に電気的に接続するリード
細線7と、 前記半導体チツプ1、前記第1及び第2のリー
ドの一端部5a,6a、前記絶縁層12又は前記
絶縁層12と前記中間部材15との組み合わせ及
び前記リード細線7を被覆し、前記第1及び第2
のリードの他端部5b,6bは被覆しない絶縁物
封止体8とから成る絶縁物封止型半導体装置。 〔2〕 前記半導体チツプ1は発光ダイオードチ
ツプである実用新案登録請求の範囲第1項記載の
絶縁物封止型半導体装置。 〔3〕 前記絶縁層12はポリイミド系樹脂の層
である実用新案登録請求の範囲第1項又は第2項
記載の絶縁物封止型半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1987082912U JPH0526759Y2 (ja) | 1987-05-29 | 1987-05-29 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1987082912U JPH0526759Y2 (ja) | 1987-05-29 | 1987-05-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63191647U true JPS63191647U (ja) | 1988-12-09 |
JPH0526759Y2 JPH0526759Y2 (ja) | 1993-07-07 |
Family
ID=30936002
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1987082912U Expired - Lifetime JPH0526759Y2 (ja) | 1987-05-29 | 1987-05-29 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0526759Y2 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01273367A (ja) * | 1988-04-26 | 1989-11-01 | Iwasaki Electric Co Ltd | 発光ダイオード |
JPH0311771A (ja) * | 1989-05-31 | 1991-01-21 | Siemens Ag | 表面実装可能なオプトデバイス |
JPH08298345A (ja) * | 1995-04-26 | 1996-11-12 | Shichizun Denshi:Kk | チップ型発光ダイオード |
WO2004093204A1 (ja) * | 2003-04-16 | 2004-10-28 | Tabuchi Electric Co., Ltd. | 反射型発光ダイオード |
WO2012108011A1 (ja) * | 2011-02-09 | 2012-08-16 | 三菱電機株式会社 | パワー半導体モジュール |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5614585U (ja) * | 1979-07-16 | 1981-02-07 | ||
JPS5950762A (ja) * | 1982-09-01 | 1984-03-23 | パワトロン・デイビジヨン・オブ・コントラヴエス・ゴ−ツ・コ−ポレイシヨン | 永久磁石直流機およびその管状フレ−ム |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5614585B2 (ja) * | 1972-07-21 | 1981-04-04 |
-
1987
- 1987-05-29 JP JP1987082912U patent/JPH0526759Y2/ja not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5614585U (ja) * | 1979-07-16 | 1981-02-07 | ||
JPS5950762A (ja) * | 1982-09-01 | 1984-03-23 | パワトロン・デイビジヨン・オブ・コントラヴエス・ゴ−ツ・コ−ポレイシヨン | 永久磁石直流機およびその管状フレ−ム |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01273367A (ja) * | 1988-04-26 | 1989-11-01 | Iwasaki Electric Co Ltd | 発光ダイオード |
JPH0311771A (ja) * | 1989-05-31 | 1991-01-21 | Siemens Ag | 表面実装可能なオプトデバイス |
JPH08298345A (ja) * | 1995-04-26 | 1996-11-12 | Shichizun Denshi:Kk | チップ型発光ダイオード |
WO2004093204A1 (ja) * | 2003-04-16 | 2004-10-28 | Tabuchi Electric Co., Ltd. | 反射型発光ダイオード |
CN100394618C (zh) * | 2003-04-16 | 2008-06-11 | 株式会社珍珠电球制作所 | 反射型发光二极管 |
WO2012108011A1 (ja) * | 2011-02-09 | 2012-08-16 | 三菱電機株式会社 | パワー半導体モジュール |
JP5669866B2 (ja) * | 2011-02-09 | 2015-02-18 | 三菱電機株式会社 | パワー半導体モジュール |
US9129949B2 (en) | 2011-02-09 | 2015-09-08 | Mitsubishi Electric Corporation | Power semiconductor module |
Also Published As
Publication number | Publication date |
---|---|
JPH0526759Y2 (ja) | 1993-07-07 |