CN100394618C - 反射型发光二极管 - Google Patents

反射型发光二极管 Download PDF

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CN100394618C
CN100394618C CNB038262908A CN03826290A CN100394618C CN 100394618 C CN100394618 C CN 100394618C CN B038262908 A CNB038262908 A CN B038262908A CN 03826290 A CN03826290 A CN 03826290A CN 100394618 C CN100394618 C CN 100394618C
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light
emitting diode
leading wire
concavity
light emitting
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山崎繁
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Toshiba Lighting and Technology Corp
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OPTO-DEVICE Co Ltd
TABUCHI DENKI KK OPTO DEVICE Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body

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Abstract

本发明涉及一种反射型发光二极管，该反射型发光二极管具有反射发光元件发出的光，将该光辐射到外部的反射面，该反射型发光二极管由凹状壳体，一对引线结构和发光元件构成，在该凹状壳体的内部具有凹面形状的反射面，在周围的壁部具有槽，该一对引线结构由较窄引线部和较宽引线部构成，该发光元件装载于上述引线结构的较窄引线部上，在上述引线结构中，较窄引线部与凹状壳体的槽嵌合。通过形成这样的结构，由于发光元件产生的热量通过较宽引线部排到外部，故可减小反射型发光二极管的热阻，可提高可靠性和实现高输出。此外，由于较宽引线部用以作为安装时的端子使用，故可提高表面安装精度，防止发光二极管的倾斜。

Description

反射型发光二极管
技术领域
本发明涉及安装于印刷电路基板等的表面上的表面安装式反射型发光二极管。特别是涉及一种在不损害反射型发光二极管的辐射效率的情况下，可改善温度特性，并且高精度地安装于印刷电路基板的表面上的反射型发光二极管。
背景技术
在过去，图5所示的表面安装型发光二极管为人们熟知。该过去的表面安装型发光二极管由发光元件41、树脂基板42和透明模制树脂部43构成。当形成上述树脂基板42时，在于基板的内外两面具有导体箔的双面印刷基板的外面上，通过蚀刻法形成电路图案47a，47b，同样在内面上，通过蚀刻法等形成发光元件的阳极46b，阴极46a。然后在切断的侧面上，通过非电解银镀涂等方式，形成将导体箔的内外电连接的侧面连接导体48a，48b。
在象这样形成的树脂基板42的电路图案47a上，通过导电性粘接剂44，粘接发光元件41的一端，发光元件41的另一端通过金丝45，与电路图案47b电连接。通过用透明树脂43覆盖象这样装载有发光元件41的树脂基板42，由此，获得表面安装型发光二极管。
但是，在采用前者的树脂基板的方法中，在由形成于树脂基板上的金属箔形成的电路图案中，由于金属箔较薄，故无法将发光元件产生的热量充分地散发到外部。由此，为了获得较高的输出，大电流动作和高可靠性，具有实用上的问题，由于来自发光元件的辐射沿全方向扩散，故具有无法有效地利用所产生的光的缺点。
另一方面，图6表示未采用上述那样的树脂基板，而使用引线架制造的反射型发光二极管。图6是为强调JP特开平11-163411号文献和JP特开平07-211940号文献中所公开的反射型发光二极管的基本结构部分而进行描述的图。
图6的反射型发光二极管通过下述的过程进行制造。即，该方式为：将发光元件51的一端采用导电性粘接剂52粘接于通过蚀刻或金属模具冲压而成的一对引线56a，56b中的一个，比如引线56a上；接着，采用金丝53将发光元件51的另一端与引线56b电连接；接着，将装载了发光元件51的引线56a，56b按照使发光元件51向下的方式安装于凹状壳体55上；然后将透明树脂54填充于凹状壳体55的凹面部57中。
在这样的反射型发光二极管中，为了使从发光元件辐射的光在暂时通过位于后方的反射面反射后向外部辐射，必须尽可能地将妨碍光路的引线的宽度变窄。由此，为了获得反射率良好的反射型发光二极管，必须减小引线的宽度，在此场合，难于将由发光元件产生的热量通过引线充分地散发到外部。其结果会产生下述问题，即，由于引线的热阻增加，故发光元件的温度上升，反射型发光二极管的寿命缩短，而且，伴随温度特性变差的时间的推移，输出下降。
本发明的目的在于提供一种表面安装式反射型发光二极管，在该表面安装式反射型发光二极管中，通过不损害其光学特性，将由发光元件产生的热量有效且主动地散发到外部，由此，可靠性高，并且温度特性优良。
发明内容
为了解决上述课题，本发明涉及一种反射型发光二极管，该反射型发光二极管具有反射发光元件发出的光，将该光辐射到外部的反射面，其特征在于：该反射型发光二极管由凹状壳体，一对引线结构和发光元件构成，在该凹状壳体的内部具有凹面形状的反射面，在凹状壳体的壁部的上部具有一对槽，该一对引线结构由位于凹状壳体外部的较宽引线部和位于较宽引线部前端的较窄引线部构成，该发光元件装载于上述引线结构的较窄引线部上，上述一对引线结构中的每个引线结构的较窄引线部分别与上述一对槽中的一个槽嵌合，在凹状壳体的槽的外部，上述引线结构的较窄引线部沿上述凹状壳体的外表面弯曲。
通过形成这样的结构，由于由发光元件产生的热量通过较宽引线部排到外部，故可降低反射型发光二极管的热阻，提高反射型发光二极管的可靠性，并实现高输出。
由于在凹状壳体的外部将较窄引线部弯曲，故弯曲加工容易，并且可使抗弯应力达到最小限，其结果，可将由于弯曲而对发光元件造成的损伤抑制在最小限，不损失可靠性。
另外，最好沿上述凹状壳体的外表面弯曲的较宽引线部在凹状壳体的底部朝向凹状壳体的底面中心弯曲，通过该弯曲部分构成安装用端子。这样，由于较宽引线部用以作为安装时的端子使用，故可提高表面安装位置精度，可防止发光二极管的倾斜。
附图说明
图1为用于说明本发明中的一对引线结构和安装于其上的发光元件的图；
图2为用于说明固定装载有发光元件的本发明的引线结构的凹状壳体用的图；
图3为说明装载有发光元件的本发明的引线结构安装于凹状壳体上的状态用的图；
图4为说明装载有发光元件的本发明的一对引线结构安装于凹状壳体上，在凹状壳体的外部弯曲的状态用的图；
图5为表示采用基板的过去的表面安装型发光元件的结构的图；
图6为说明装载有发光元件的过去的引线结构安装于凹状壳体上的状态用的图；
图7为说明装载有发光元件的过去的引线结构安装于凹状壳体上，在凹状壳体的外部弯曲的状态用的图。
具体实施方式
下面通过图1～图4，对本发明进行说明。图1为用于说明本发明的引线结构和安装于其上的发光元件的图。在图1中，本发明的一对引线结构由较宽引线部18a，18b和其前端的宽度较小的较窄引线部12a，12b构成。发光元件11的一端采用导电性树脂14固定于设置在较窄引线部12a上的发光元件装载用圆形部位上。另一方面，发光元件11的另一端采用金丝13，与较窄引线部12b电连接。
图2为说明用于固定本发明的引线结构的凹状壳体用的图。图2(a)为凹状壳体的总体立体图，图2(b)为凹状壳体的侧视图。在凹状壳体22的反射面15上，蒸镀有铝或银，或形成有镀层。在构成凹状壳体22的周围的壁部，用于嵌合上述引线结构的一对槽17a，17b相对地形成。
图3为说明装载了发光元件的本发明的引线结构安装于凹状壳体上的状态用的图。在图1，装载有发光元件11的引线结构上下相反，较窄引线部12a，12b分别与凹状壳体22的槽17a，17b嵌合。此时，引线结构在凹状壳体22的内部构成宽度较小的较窄引线部12a，12b，在凹状壳体22的外部构成宽度较大的较宽引线部18a，18b。
接着，在该发光元件11和反射面15之间的间隙中，将包含硬化催化剂的高粘度的透明环氧树脂填充到凹状壳体22的缘面，然后，通过80～105℃的气炉使透明环氧树脂硬化，将较窄引线部12a，12b与凹状壳体22形成一体。
象这样，与凹状壳体22形成一体的较窄引线部12a，12b分别象图4所示的那样，在凹状壳体22的两端的槽17a，17b的外部，沿凹状壳体22的外面弯曲，此外，在凹状壳体22的底部，向凹状壳体22的内面弯曲，构成表面安装型发光二极管。
在过去的反射型发光二极管中，引线宽度较小、热阻高，难于实现高输出，而在本发明中，象上述那样，可获得下述的优良的反射型发光二极管，其中，在凹状壳体22的内部，可极力地减小妨碍辐射光的引线宽度，并且在凹状壳体22的外部，通过增加引线宽度，可降低热阻，并且表面安装精度较高。
另外，由于在凹状壳体22的外部，将较窄引线部12a，12b弯曲，故易于弯曲加工，可减小抗弯应力，故不会破坏凹状壳体22。

Claims (2)

1.一种反射型发光二极管，该反射型发光二极管具有反射发光元件发出的光，将该光辐射到外部的反射面，其特征在于：
该反射型发光二极管由凹状壳体，一对引线结构和发光元件构成，在该凹状壳体的内部具有凹面形状的反射面，在凹状壳体的壁部的上部具有一对槽，该一对引线结构由位于凹状壳体外部的较宽引线部和位于较宽引线部前端的较窄引线部构成，该发光元件装载于上述引线结构的较窄引线部上，上述一对引线结构中的每个引线结构的较窄引线部分别与上述一对槽中的一个槽嵌合，在凹状壳体的槽的外部，上述引线结构的较窄引线部沿上述凹状壳体的外表面弯曲。
2.根据权利要求1所述的反射型发光二极管，其特征在于沿上述凹状壳体的外表面弯曲的较宽引线部在凹状壳体的底部朝向凹状壳体的底面中心弯曲，通过该弯曲部分构成安装用端子。
CNB038262908A 2003-04-16 2003-04-16 反射型发光二极管 Expired - Fee Related CN100394618C (zh)

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JP5630436B2 (ja) 2009-03-16 2014-11-26 東芝ライテック株式会社 反射型発光ダイオード及び反射型発光ダイオード発光装置
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CN103137823B (zh) * 2011-11-24 2015-10-07 展晶科技(深圳)有限公司 发光二极管及应用该发光二极管的直下式背光源
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US20060278881A1 (en) 2006-12-14
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