JPS63177463A - 電力用半導体構成要素の微細構造にされた接触電極の製造方法 - Google Patents

電力用半導体構成要素の微細構造にされた接触電極の製造方法

Info

Publication number
JPS63177463A
JPS63177463A JP62277550A JP27755087A JPS63177463A JP S63177463 A JPS63177463 A JP S63177463A JP 62277550 A JP62277550 A JP 62277550A JP 27755087 A JP27755087 A JP 27755087A JP S63177463 A JPS63177463 A JP S63177463A
Authority
JP
Japan
Prior art keywords
layer
manufacturing
insulating layer
aluminum
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62277550A
Other languages
English (en)
Japanese (ja)
Inventor
トーマス　ストックマイエル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SEMIKURON ELECTRON GmbH
Original Assignee
SEMIKURON ELECTRON GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SEMIKURON ELECTRON GmbH filed Critical SEMIKURON ELECTRON GmbH
Publication of JPS63177463A publication Critical patent/JPS63177463A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP62277550A 1986-11-04 1987-11-04 電力用半導体構成要素の微細構造にされた接触電極の製造方法 Pending JPS63177463A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19863637513 DE3637513A1 (de) 1986-11-04 1986-11-04 Verfahren zum herstellen feinstrukturierter kontaktelektroden von leistungs-halbleiterbauelementen
DE3637513.6 1986-11-04

Publications (1)

Publication Number Publication Date
JPS63177463A true JPS63177463A (ja) 1988-07-21

Family

ID=6313120

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62277550A Pending JPS63177463A (ja) 1986-11-04 1987-11-04 電力用半導体構成要素の微細構造にされた接触電極の製造方法

Country Status (2)

Country Link
JP (1) JPS63177463A (enrdf_load_stackoverflow)
DE (1) DE3637513A1 (enrdf_load_stackoverflow)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4400200C2 (de) * 1993-01-05 1997-09-04 Toshiba Kawasaki Kk Halbleitervorrichtung mit verbesserter Verdrahtungsstruktur und Verfahren zu ihrer Herstellung
US5486493A (en) * 1994-02-25 1996-01-23 Jeng; Shin-Puu Planarized multi-level interconnect scheme with embedded low-dielectric constant insulators
DE69531571T2 (de) * 1994-05-27 2004-04-08 Texas Instruments Inc., Dallas Verbesserungen in Bezug auf Halbleitervorrichtungen
DE19612838A1 (de) * 1995-11-13 1997-05-15 Asea Brown Boveri Leistungshalbleiterbauelement sowie Verfahren zu dessen Herstellung
DE19617055C1 (de) * 1996-04-29 1997-06-26 Semikron Elektronik Gmbh Halbleiterleistungsmodul hoher Packungsdichte in Mehrschichtbauweise
US6054769A (en) * 1997-01-17 2000-04-25 Texas Instruments Incorporated Low capacitance interconnect structures in integrated circuits having an adhesion and protective overlayer for low dielectric materials
US5818111A (en) * 1997-03-21 1998-10-06 Texas Instruments Incorporated Low capacitance interconnect structures in integrated circuits using a stack of low dielectric materials
US6803667B2 (en) * 2001-08-09 2004-10-12 Denso Corporation Semiconductor device having a protective film
DE10353121B4 (de) * 2003-11-12 2009-07-30 Micronas Gmbh Elektrisches Bauelement
US7777283B2 (en) 2004-11-26 2010-08-17 Micronas Gmbh Electric component
DE102006003930A1 (de) * 2006-01-26 2007-08-09 Infineon Technologies Austria Ag Leistungshalbleiterelement mit internen Bonddrahtverbindungen zu einem Bauelementsubstrat und Verfahren zur Herstellung desselben
EP2804209A1 (en) * 2013-05-17 2014-11-19 ABB Technology AG Moulded electronics module

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3567508A (en) * 1968-10-31 1971-03-02 Gen Electric Low temperature-high vacuum contact formation process
US4079409A (en) * 1973-11-27 1978-03-14 Licentia Patent-Verwaltungs G.M.B.H. Thyristor with pressure contacting
US4433004A (en) * 1979-07-11 1984-02-21 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device and a method for manufacturing the same
US4505029A (en) * 1981-03-23 1985-03-19 General Electric Company Semiconductor device with built-up low resistance contact
DE3443793A1 (de) * 1984-11-30 1986-06-12 Siemens AG, 1000 Berlin und 8000 München Verfahren zum kontaktieren von halbleiterbauelementen
DE3446789A1 (de) * 1984-12-21 1986-07-03 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Verfahren zum herstellen von halbleiterbauelementen

Also Published As

Publication number Publication date
DE3637513C2 (enrdf_load_stackoverflow) 1993-02-18
DE3637513A1 (de) 1988-05-11

Similar Documents

Publication Publication Date Title
US4505029A (en) Semiconductor device with built-up low resistance contact
US3952404A (en) Beam lead formation method
JP3768158B2 (ja) 半導体デバイス
KR101024474B1 (ko) 전극 구조 및 반도체 장치
US9613929B2 (en) Power semiconductor chip with a metallic moulded body for contacting thick wires or strips and method for the production thereof
JPS63177463A (ja) 電力用半導体構成要素の微細構造にされた接触電極の製造方法
US3457472A (en) Semiconductor devices adapted for pressure mounting
JP4344560B2 (ja) 半導体チップおよびこれを用いた半導体装置
GB2095904A (en) Semiconductor device with built-up low resistance contact and laterally conducting second contact
JPH08195397A (ja) バンプ付き半導体装置およびその製造方法
JP5548519B2 (ja) 半導体装置の製造方法
US20200013741A1 (en) Semiconductor device and method for manufacturing the semiconductor device
JPH11186423A (ja) ハーメチックシールカバーおよびその製造方法
US20250105102A1 (en) Power semiconductor device having a solder bleed out prevention layer and method for fabricating the same
JPH036817A (ja) 半導体素子の多層電極の製造方法
JPH06120271A (ja) 半導体装置
JPH02277242A (ja) 半導体装置の製造方法
JPS61239647A (ja) 半導体装置
JP3225592B2 (ja) 表面波素子の製造方法および表面波素子の電極パターン
JP3313233B2 (ja) 半導体装置
JPS62281356A (ja) 半導体装置の製造方法
JP2003142651A (ja) 電力用半導体装置
JPH03112135A (ja) 半導体装置およびその製造方法
JPS5835953A (ja) 半導体装置
JPH07130790A (ja) 半導体装置の電極構造