JPS63164329A - 半導体装置 - Google Patents

半導体装置

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Publication number
JPS63164329A
JPS63164329A JP61308642A JP30864286A JPS63164329A JP S63164329 A JPS63164329 A JP S63164329A JP 61308642 A JP61308642 A JP 61308642A JP 30864286 A JP30864286 A JP 30864286A JP S63164329 A JPS63164329 A JP S63164329A
Authority
JP
Japan
Prior art keywords
layer
electrode
copper
wire
deposited layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61308642A
Other languages
English (en)
Inventor
Ikuo Mori
郁夫 森
Koichiro Atsumi
幸一郎 渥美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61308642A priority Critical patent/JPS63164329A/ja
Publication of JPS63164329A publication Critical patent/JPS63164329A/ja
Pending legal-status Critical Current

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    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 ［発明の構成］ （産業上の利用分野） この発明はリードフレームの端子と半導体素子のアルミ
ニュウム電極とが銅線でボンディングされる半導体装置
に関する。
（従来の技術） 一般に、半導体装置はリードフレームに半導体素子がダ
イボンディングされ、この半導体素子の電極と上記リー
ドフレームの端子とがワイヤボンディングされてなる。
ワイヤボンディングに用いられるワイヤは金線が最良で
あるが、金線は高価であるので、それに代わって銅線を
用いることが考えられている。
１ｉ４ＩＩを用いた場合、ボンディングの際に、放電あ
るいはガストーチによって上記銅線の先端に形成される
銅ボールは、金線に形成される金ボールに比べて硬く、
しかも変形しにくい。そのため、その銅ボールを上記半
導体素子のアルミニウム電極に押付けてボンディングす
る際、良好なボンディング部を得るのに十分なボンディ
ング圧並びに超音波出力を加えると、上記アルミニウム
電極や電極下層のＳｉＯ２層やＳ１層に大きな力が加わ
るので、これらが変形したり、損傷するというこため、
ボンディング圧あるいは超音波出力を低くすると、十分
な接合強度が得らる最適条件範囲が狭くなるという問題
が生じる。
（発明が解決しようとする問題点） この発明は上記事情にもとずきなされたもので、その目
的とするところは、銅線を用いてワイヤボンディングす
る際に、アルミニウム電極や電極下層のＳｉＯ２や３ｉ
層を変形させたり、損傷させることなく十分な接合強度
を持つボンディング接合部が得られるようにした半導体
装置を提供することにある。
［発明の構成］ （問題点を解決するための手段及び作用）上記問題点を
解決するためにこの発明は、リードフレームの端子と、
このリードフレーム上に設けられた半導体素子の電極部
とが銅線によりボンディングされる半導体装置において
、上記電極部に銅の蒸着層を設ける。そして、ボンディ
ング時にＮ１１ｉ部または電極下層の８１０２層やＳｉ
層が損傷するのを防止するようにした。
（実施例） 以下、この発明の一実施例を図面を参照して説明する。
第２図に示す半導体装置はリードフレーム１を備えてい
る。このリードフレーム１には半導体素子２がダイボン
ディングされている。また、半導体素子２にはアルミニ
ウム電極３が設けられている。このアルミニウム電極３
上にはアルミニウムに比べて硬質な金属、たとえばチタ
ンなどを蒸着することによって補強用蒸着層としての第
１の蒸着層５が形成されている。この第１の蒸着層５上
には銅を蒸着することによって第２の蒸着層６が形成さ
れている。
そして、上記アルミニウム電極３に設けられた第２の蒸
着層６とリードフレーム１の端子４とは銅線７によって
ワイヤボンディングされている。
このような半導体装置によれば、アルミニウム電極３に
第１の蒸着層５を介して銅からなる第２の蒸着層６を設
けた。そのため、ワイヤボンディング時に銅＄１７に形
成された銅ボール８は上記第２の蒸着層６に押圧される
ため、その押圧力が銅ボール８とほぼ同じ硬さの第２の
蒸着層６によって分散され、アルミニウム電極３に極度
に加わる損傷するのが防止される。しかも、上記アルミ
ニウム電極３にはアルミニウムに比べて十分硬質な金属
からなる第１の蒸着層５を介して第２の蒸着層６が設け
られている。そのため、この第１の蒸着１５によってワ
イヤボンディング時の押圧力がさらに良好に分散される
ことになるから、アルミニウム電極３や電極下層のＳｉ
Ｏ２層や８１層９が変形したり、損傷するのが確実に防
止される。
さらに、第２の蒸着層６をここにボンディングされる銅
線７と同種の金属である銅によって形成したから、合金
層の成長による経時劣化という問題が生じることもなく
、信頼性の高い接合強度が得られる。
なお、上記一実施例では、アルミニウム電極に第１の蒸
着層と第２の蒸着層とを設けたが、第１の層は設けずに
、第２の蒸着層だけであってもよく、またアルミニウム
電極を介さずともよい。
［発明の効果］ 以上述べたようにこの発明は、リードフレームの端子と
半導体素子の電極部とが銅線によりボンディングされる
半導体装置において、半導体素子の電極部に銅の蒸着層
を設けるようにした。この蒸着層は鋼材料で形成したた
め、従来のアルミニウム電極に比べて硬い。したがって
、ボンディング時に電極や電極下層の８１０２層やＳｉ
層が変形したり、損傷するのを防止できる。さらに、銅
ポールと電極とは同種材料の接合であるため、合金層の
成長による経時劣化が発生するということがなく、信頼
性の高い接合強度が得られる。
【図面の簡単な説明】 図面はこの発明の一実施例を示し、第１図はアルミ−ニ
ウム電橋の部分の拡大図、第２図は半導体装置の概略図
である。 １・・・リードフレーム、２・・・半導体素子、３・・
・アルミニウム電極、４・・・端子、５・・・第１の蒸
着層、６・・・第２の蒸着層、７・・・銅線、８・・・
銅ボール。 出願人代理人　弁理士　鈴江武彦 ソ 第１図 第２図

Claims (3)

    【特許請求の範囲】
  1. （１）リードフレームの端子と、このリードフレーム上
    に設けられた半導体素子の電極部とが銅線によりボンデ
    イングされる半導体装置において、上記電極部として銅
    の蒸着膜を設けたことを特徴とする半導体装置。
  2. （２）上記銅の蒸着膜はアルミニウム電極部の上に設け
    られたことを特徴とする特許請求の範囲第１項記載の半
    導体装置。
  3. （３）上記アルミニウム電極部にはアルミニウムよりも
    硬質な金属からなる補強用蒸着層を介して上記銅の蒸着
    層が設けられていることを特徴とする特許請求の範囲第
    ２項記載の半導体装置。
JP61308642A 1986-12-26 1986-12-26 半導体装置 Pending JPS63164329A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61308642A JPS63164329A (ja) 1986-12-26 1986-12-26 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61308642A JPS63164329A (ja) 1986-12-26 1986-12-26 半導体装置

Publications (1)

Publication Number Publication Date
JPS63164329A true JPS63164329A (ja) 1988-07-07

Family

ID=17983516

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61308642A Pending JPS63164329A (ja) 1986-12-26 1986-12-26 半導体装置

Country Status (1)

Country Link
JP (1) JPS63164329A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5116783A (en) * 1989-01-13 1992-05-26 Mitsubishi Denki Kabushiki Kaisha Method of producing semiconductor device
US5229646A (en) * 1989-01-13 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with a copper wires ball bonded to aluminum electrodes
JP2017005100A (ja) * 2015-06-10 2017-01-05 三菱電機株式会社 半導体チップ、半導体装置およびそれらの製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5116783A (en) * 1989-01-13 1992-05-26 Mitsubishi Denki Kabushiki Kaisha Method of producing semiconductor device
US5229646A (en) * 1989-01-13 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with a copper wires ball bonded to aluminum electrodes
JP2017005100A (ja) * 2015-06-10 2017-01-05 三菱電機株式会社 半導体チップ、半導体装置およびそれらの製造方法

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