JPS6314503B2 - - Google Patents

Info

Publication number
JPS6314503B2
JPS6314503B2 JP53105977A JP10597778A JPS6314503B2 JP S6314503 B2 JPS6314503 B2 JP S6314503B2 JP 53105977 A JP53105977 A JP 53105977A JP 10597778 A JP10597778 A JP 10597778A JP S6314503 B2 JPS6314503 B2 JP S6314503B2
Authority
JP
Japan
Prior art keywords
layer
gate electrode
buried
semiconductor substrate
inversion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53105977A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5533069A (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10597778A priority Critical patent/JPS5533069A/ja
Publication of JPS5533069A publication Critical patent/JPS5533069A/ja
Publication of JPS6314503B2 publication Critical patent/JPS6314503B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP10597778A 1978-08-30 1978-08-30 Semiconductor device Granted JPS5533069A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10597778A JPS5533069A (en) 1978-08-30 1978-08-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10597778A JPS5533069A (en) 1978-08-30 1978-08-30 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5533069A JPS5533069A (en) 1980-03-08
JPS6314503B2 true JPS6314503B2 (enrdf_load_stackoverflow) 1988-03-31

Family

ID=14421807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10597778A Granted JPS5533069A (en) 1978-08-30 1978-08-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5533069A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60134467A (ja) * 1983-12-23 1985-07-17 Hitachi Ltd 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60787B2 (ja) * 1975-11-27 1985-01-10 三菱電機株式会社 絶縁ゲート形電界効果半導体装置
JPS5315773A (en) * 1976-07-28 1978-02-14 Hitachi Ltd Mis type semiconductor device and its production
JPS6036109B2 (ja) * 1976-11-29 1985-08-19 株式会社日立製作所 Ｍｏｓ型電界効果トランジスタ

Also Published As

Publication number Publication date
JPS5533069A (en) 1980-03-08

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