JPS5533069A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5533069A
JPS5533069A JP10597778A JP10597778A JPS5533069A JP S5533069 A JPS5533069 A JP S5533069A JP 10597778 A JP10597778 A JP 10597778A JP 10597778 A JP10597778 A JP 10597778A JP S5533069 A JPS5533069 A JP S5533069A
Authority
JP
Japan
Prior art keywords
layer
type
gate
drain
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10597778A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6314503B2 (enrdf_load_stackoverflow
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10597778A priority Critical patent/JPS5533069A/ja
Publication of JPS5533069A publication Critical patent/JPS5533069A/ja
Publication of JPS6314503B2 publication Critical patent/JPS6314503B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP10597778A 1978-08-30 1978-08-30 Semiconductor device Granted JPS5533069A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10597778A JPS5533069A (en) 1978-08-30 1978-08-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10597778A JPS5533069A (en) 1978-08-30 1978-08-30 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5533069A true JPS5533069A (en) 1980-03-08
JPS6314503B2 JPS6314503B2 (enrdf_load_stackoverflow) 1988-03-31

Family

ID=14421807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10597778A Granted JPS5533069A (en) 1978-08-30 1978-08-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5533069A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60134467A (ja) * 1983-12-23 1985-07-17 Hitachi Ltd 半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5265685A (en) * 1975-11-27 1977-05-31 Mitsubishi Electric Corp Insulated gate type field effect semiconductor device
JPS5315773A (en) * 1976-07-28 1978-02-14 Hitachi Ltd Mis type semiconductor device and its production
JPS5367372A (en) * 1976-11-29 1978-06-15 Hitachi Ltd Mos-type field effect transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5265685A (en) * 1975-11-27 1977-05-31 Mitsubishi Electric Corp Insulated gate type field effect semiconductor device
JPS5315773A (en) * 1976-07-28 1978-02-14 Hitachi Ltd Mis type semiconductor device and its production
JPS5367372A (en) * 1976-11-29 1978-06-15 Hitachi Ltd Mos-type field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60134467A (ja) * 1983-12-23 1985-07-17 Hitachi Ltd 半導体装置

Also Published As

Publication number Publication date
JPS6314503B2 (enrdf_load_stackoverflow) 1988-03-31

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