JPS6110987B2 - - Google Patents

Info

Publication number
JPS6110987B2
JPS6110987B2 JP51007708A JP770876A JPS6110987B2 JP S6110987 B2 JPS6110987 B2 JP S6110987B2 JP 51007708 A JP51007708 A JP 51007708A JP 770876 A JP770876 A JP 770876A JP S6110987 B2 JPS6110987 B2 JP S6110987B2
Authority
JP
Japan
Prior art keywords
oxide film
conductivity type
region
silicon nitride
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51007708A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5291381A (en
Inventor
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP770876A priority Critical patent/JPS5291381A/ja
Publication of JPS5291381A publication Critical patent/JPS5291381A/ja
Publication of JPS6110987B2 publication Critical patent/JPS6110987B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
JP770876A 1976-01-26 1976-01-26 Field effect type semiconductor device Granted JPS5291381A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP770876A JPS5291381A (en) 1976-01-26 1976-01-26 Field effect type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP770876A JPS5291381A (en) 1976-01-26 1976-01-26 Field effect type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5291381A JPS5291381A (en) 1977-08-01
JPS6110987B2 true JPS6110987B2 (enrdf_load_stackoverflow) 1986-04-01

Family

ID=11673230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP770876A Granted JPS5291381A (en) 1976-01-26 1976-01-26 Field effect type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5291381A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55130171A (en) * 1979-03-29 1980-10-08 Fujitsu Ltd Mos field effect transistor
US4835585A (en) * 1984-11-26 1989-05-30 American Telephone And Telegraph Company, At&T Bell Laboratories Trench gate structures
JP4511007B2 (ja) * 2000-09-29 2010-07-28 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
KR100466193B1 (ko) * 2002-07-18 2005-01-13 주식회사 하이닉스반도체 반도체 메모리 소자의 제조 방법

Also Published As

Publication number Publication date
JPS5291381A (en) 1977-08-01

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