JPS63124465A - バイポ−ラトランジスタの製造方法 - Google Patents
バイポ−ラトランジスタの製造方法Info
- Publication number
- JPS63124465A JPS63124465A JP61271320A JP27132086A JPS63124465A JP S63124465 A JPS63124465 A JP S63124465A JP 61271320 A JP61271320 A JP 61271320A JP 27132086 A JP27132086 A JP 27132086A JP S63124465 A JPS63124465 A JP S63124465A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor layer
- electrode
- film
- base electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 41
- 229920002120 photoresistant polymer Polymers 0.000 claims description 20
- 239000004020 conductor Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61271320A JPS63124465A (ja) | 1986-11-13 | 1986-11-13 | バイポ−ラトランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61271320A JPS63124465A (ja) | 1986-11-13 | 1986-11-13 | バイポ−ラトランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63124465A true JPS63124465A (ja) | 1988-05-27 |
| JPH0588541B2 JPH0588541B2 (enrdf_load_stackoverflow) | 1993-12-22 |
Family
ID=17498409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61271320A Granted JPS63124465A (ja) | 1986-11-13 | 1986-11-13 | バイポ−ラトランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63124465A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5344786A (en) * | 1990-08-31 | 1994-09-06 | Texas Instruments Incorporated | Method of fabricating self-aligned heterojunction bipolar transistors |
| US5665614A (en) * | 1995-06-06 | 1997-09-09 | Hughes Electronics | Method for making fully self-aligned submicron heterojunction bipolar transistor |
| US5702958A (en) * | 1994-08-09 | 1997-12-30 | Texas Instruments Incorporated | Method for the fabrication of bipolar transistors |
| JP2002170829A (ja) * | 2000-12-04 | 2002-06-14 | Nec Corp | ヘテロ接合型バイポーラトランジスタ及びその製造方法 |
| JP2011176171A (ja) * | 2010-02-25 | 2011-09-08 | Nippon Telegr & Teleph Corp <Ntt> | バイポーラトランジスタおよびその製造方法 |
-
1986
- 1986-11-13 JP JP61271320A patent/JPS63124465A/ja active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5344786A (en) * | 1990-08-31 | 1994-09-06 | Texas Instruments Incorporated | Method of fabricating self-aligned heterojunction bipolar transistors |
| US5702958A (en) * | 1994-08-09 | 1997-12-30 | Texas Instruments Incorporated | Method for the fabrication of bipolar transistors |
| US5665614A (en) * | 1995-06-06 | 1997-09-09 | Hughes Electronics | Method for making fully self-aligned submicron heterojunction bipolar transistor |
| US5729033A (en) * | 1995-06-06 | 1998-03-17 | Hughes Electronics | Fully self-aligned submicron heterojunction bipolar transistor |
| JP2002170829A (ja) * | 2000-12-04 | 2002-06-14 | Nec Corp | ヘテロ接合型バイポーラトランジスタ及びその製造方法 |
| JP2011176171A (ja) * | 2010-02-25 | 2011-09-08 | Nippon Telegr & Teleph Corp <Ntt> | バイポーラトランジスタおよびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0588541B2 (enrdf_load_stackoverflow) | 1993-12-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH1070134A (ja) | ダブルヘテロ構造バイポーラトランジスタデバイスの製造方法 | |
| JPS63124465A (ja) | バイポ−ラトランジスタの製造方法 | |
| JP2851044B2 (ja) | 半導体装置の製造方法 | |
| JP3347947B2 (ja) | 半導体装置の製造方法 | |
| US5726468A (en) | Compound semiconductor bipolar transistor | |
| JPH0722310A (ja) | 半導体集積回路の製造方法 | |
| JP2001308312A (ja) | Ｉｉｉ−ｖ材料上にダブルヘテロ接合バイポーラトランジスタを製造する方法 | |
| KR100568567B1 (ko) | 이종 접합 쌍극자 트랜지스터 및 그 제조 방법 | |
| EP1471580A2 (en) | Bipolar transistor and method of producing same | |
| JP2576165B2 (ja) | バイポーラトランジスタの製造方法 | |
| JP3244795B2 (ja) | 半導体装置の製造方法 | |
| JPH0569297B2 (enrdf_load_stackoverflow) | ||
| JP3488833B2 (ja) | 電界効果トランジスタの形成方法 | |
| JP2005159112A (ja) | 半導体装置および半導体装置の製造方法 | |
| KR100818417B1 (ko) | 이종접합 바이폴라 트랜지스터의 제조방법 | |
| JP2976664B2 (ja) | バイポーラトランジスタの製造方法 | |
| JP2835237B2 (ja) | ヘテロ接合半導体集積回路 | |
| JPH04324638A (ja) | ヘテロ接合バイポーラトランジスタの製造方法 | |
| KR0146652B1 (ko) | 임시 에미터 전극과 폴리이미드 측벽막을 이용한 자기정렬형 이종접합 바이폴라 트랜지스터의 제작방법 | |
| JP3161044B2 (ja) | ヘテロ接合バイポーラトランジスタ集積回路装置の製造方法 | |
| JP2817191B2 (ja) | ヘテロ接合バイポーラトランジスタの製造方法 | |
| JP2862705B2 (ja) | ヘテロ接合半導体装置及びその製造方法 | |
| JPH0335528A (ja) | 半導体装置の製造方法 | |
| JP3104282B2 (ja) | 半導体装置の製造方法 | |
| JPH0571171B2 (enrdf_load_stackoverflow) |