JPS63119591A - 薄い固体フィルムからなる層状構造体の選択的混合方法 - Google Patents

薄い固体フィルムからなる層状構造体の選択的混合方法

Info

Publication number
JPS63119591A
JPS63119591A JP62256117A JP25611787A JPS63119591A JP S63119591 A JPS63119591 A JP S63119591A JP 62256117 A JP62256117 A JP 62256117A JP 25611787 A JP25611787 A JP 25611787A JP S63119591 A JPS63119591 A JP S63119591A
Authority
JP
Japan
Prior art keywords
multilayer semiconductor
layer
energy source
laser beam
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62256117A
Other languages
English (en)
Japanese (ja)
Inventor
ジョン・ダンカン・ラルストン
アンソニー・リューク・モレッティ
ラヴィンダー・クマール・ジャイン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BP Corp North America Inc
Original Assignee
BP Corp North America Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BP Corp North America Inc filed Critical BP Corp North America Inc
Publication of JPS63119591A publication Critical patent/JPS63119591A/ja
Pending legal-status Critical Current

Links

Classifications

    • H10P95/90—
    • H10P95/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/182—Intermixing or interdiffusion or disordering of III-V heterostructures, e.g. IILD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2258—Diffusion into or out of AIIIBV compounds
    • H10P14/3824—
    • H10P32/14—
    • H10P32/174—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Magnetic Heads (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Photovoltaic Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
JP62256117A 1986-10-09 1987-10-09 薄い固体フィルムからなる層状構造体の選択的混合方法 Pending JPS63119591A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/916,818 US4731338A (en) 1986-10-09 1986-10-09 Method for selective intermixing of layered structures composed of thin solid films
US916818 1992-07-20

Publications (1)

Publication Number Publication Date
JPS63119591A true JPS63119591A (ja) 1988-05-24

Family

ID=25437882

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62256117A Pending JPS63119591A (ja) 1986-10-09 1987-10-09 薄い固体フィルムからなる層状構造体の選択的混合方法

Country Status (11)

Country Link
US (1) US4731338A (enExample)
EP (1) EP0264222B1 (enExample)
JP (1) JPS63119591A (enExample)
KR (1) KR880005660A (enExample)
CN (1) CN1012405B (enExample)
AT (1) ATE102398T1 (enExample)
AU (1) AU592019B2 (enExample)
CA (1) CA1277439C (enExample)
DE (1) DE3789187T2 (enExample)
IE (1) IE872671L (enExample)
IN (1) IN171245B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2544378B2 (ja) * 1987-03-25 1996-10-16 株式会社日立製作所 光半導体装置
GB2206233B (en) * 1987-06-23 1990-09-05 British Gas Plc Miniature thermoelectric converters
US4817102A (en) * 1988-04-18 1989-03-28 Maurer Larry D Acousto-electromagnetic hologistic resonant system
US5107316A (en) * 1989-12-28 1992-04-21 Siemens Corporate Research, Inc. Catoptrical opto-electronic gas sensor
US5191784A (en) * 1989-12-28 1993-03-09 Siemens Corporate Research, Inc. Opto-electronic gas sensor
US5081633A (en) * 1990-05-31 1992-01-14 Applied Solar Energy Corporation Semiconductor laser diode
US6959555B2 (en) * 2001-02-09 2005-11-01 Bsst Llc High power density thermoelectric systems
US6672076B2 (en) * 2001-02-09 2004-01-06 Bsst Llc Efficiency thermoelectrics utilizing convective heat flow
US6539725B2 (en) * 2001-02-09 2003-04-01 Bsst Llc Efficiency thermoelectrics utilizing thermal isolation
US7231772B2 (en) * 2001-02-09 2007-06-19 Bsst Llc. Compact, high-efficiency thermoelectric systems
US7946120B2 (en) 2001-02-09 2011-05-24 Bsst, Llc High capacity thermoelectric temperature control system
US7942010B2 (en) 2001-02-09 2011-05-17 Bsst, Llc Thermoelectric power generating systems utilizing segmented thermoelectric elements
US7273981B2 (en) * 2001-02-09 2007-09-25 Bsst, Llc. Thermoelectric power generation systems
US8490412B2 (en) 2001-08-07 2013-07-23 Bsst, Llc Thermoelectric personal environment appliance
US7426835B2 (en) * 2001-08-07 2008-09-23 Bsst, Llc Thermoelectric personal environment appliance
US6812395B2 (en) * 2001-10-24 2004-11-02 Bsst Llc Thermoelectric heterostructure assemblies element
SG99970A1 (en) * 2002-04-05 2003-11-27 Inst Materials Research & Eng Method for forming a modified semiconductor having a plurality of band gaps
US7847179B2 (en) * 2005-06-06 2010-12-07 Board Of Trustees Of Michigan State University Thermoelectric compositions and process
JP2008547370A (ja) * 2005-06-28 2008-12-25 ビーエスエスティー エルエルシー 変動する熱電源用の熱電発電機
US7952015B2 (en) 2006-03-30 2011-05-31 Board Of Trustees Of Michigan State University Pb-Te-compounds doped with tin-antimony-tellurides for thermoelectric generators or peltier arrangements
US20090235969A1 (en) * 2008-01-25 2009-09-24 The Ohio State University Research Foundation Ternary thermoelectric materials and methods of fabrication
US8701422B2 (en) 2008-06-03 2014-04-22 Bsst Llc Thermoelectric heat pump
US20100024859A1 (en) * 2008-07-29 2010-02-04 Bsst, Llc. Thermoelectric power generator for variable thermal power source
DE112012004803B4 (de) 2011-11-17 2022-03-03 Gentherm Inc. Thermoelektrische Vorrichtung mit Grenzflächenmaterialien und Verfahren zur Herstellung derselben
US11075331B2 (en) 2018-07-30 2021-07-27 Gentherm Incorporated Thermoelectric device having circuitry with structural rigidity
EP3745471A1 (en) 2019-05-31 2020-12-02 OSRAM Opto Semiconductors GmbH Method of laser treatment of a semiconductor wafer comprising algainp-leds to increase their light generating efficiency
DE102021104685A1 (de) 2021-02-26 2022-09-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung eines optoelektronischen halbleiterbauelements und optoelektronisches halbleiterbauelement

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186325A (en) * 1981-04-28 1982-11-16 Commissariat Energie Atomique Specimen processor with pulse electron beam
JPS58112326A (ja) * 1981-12-26 1983-07-04 Fujitsu Ltd 複合ビ−ムアニ−ル方法
JPS6037133A (ja) * 1983-05-23 1985-02-26 バーナード・ビー・カツツ レーザーによつて半導体を焼きなましする方法
JPS60262417A (ja) * 1984-06-08 1985-12-25 Nec Corp 半導体結晶の製造方法
JPS61191089A (ja) * 1985-02-20 1986-08-25 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPS62257782A (ja) * 1986-05-01 1987-11-10 Mitsubishi Electric Corp 半導体の加工方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4318752A (en) * 1980-05-16 1982-03-09 Bell Telephone Laboratories, Incorporated Heterojunction semiconductor laser fabrication utilizing laser radiation
EP0077825B1 (en) * 1981-05-06 1987-08-12 University of Illinois Foundation Method of forming wide bandgap region within multilayer semiconductors
US4511408A (en) * 1982-04-22 1985-04-16 The Board Of Trustees Of The University Of Illinois Semiconductor device fabrication with disordering elements introduced into active region
US4639275A (en) * 1982-04-22 1987-01-27 The Board Of Trustees Of The University Of Illinois Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor
US4585491A (en) * 1983-09-02 1986-04-29 Xerox Corporation Wavelength tuning of quantum well lasers by thermal annealing
US4637122A (en) * 1983-09-19 1987-01-20 Honeywell Inc. Integrated quantum well lasers for wavelength division multiplexing
JPH06105718B2 (ja) * 1984-06-05 1994-12-21 日本電気株式会社 半導体装置及びその製造方法
US4578128A (en) * 1984-12-03 1986-03-25 Ncr Corporation Process for forming retrograde dopant distributions utilizing simultaneous outdiffusion of dopants
US4654090A (en) * 1985-09-13 1987-03-31 Xerox Corporation Selective disordering of well structures by laser annealing

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186325A (en) * 1981-04-28 1982-11-16 Commissariat Energie Atomique Specimen processor with pulse electron beam
JPS58112326A (ja) * 1981-12-26 1983-07-04 Fujitsu Ltd 複合ビ−ムアニ−ル方法
JPS6037133A (ja) * 1983-05-23 1985-02-26 バーナード・ビー・カツツ レーザーによつて半導体を焼きなましする方法
JPS60262417A (ja) * 1984-06-08 1985-12-25 Nec Corp 半導体結晶の製造方法
JPS61191089A (ja) * 1985-02-20 1986-08-25 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPS62257782A (ja) * 1986-05-01 1987-11-10 Mitsubishi Electric Corp 半導体の加工方法

Also Published As

Publication number Publication date
CA1277439C (en) 1990-12-04
EP0264222A2 (en) 1988-04-20
AU7946687A (en) 1988-04-14
KR880005660A (ko) 1988-06-29
DE3789187D1 (de) 1994-04-07
CN87106894A (zh) 1988-04-20
CN1012405B (zh) 1991-04-17
ATE102398T1 (de) 1994-03-15
AU592019B2 (en) 1989-12-21
EP0264222A3 (en) 1989-08-16
DE3789187T2 (de) 1994-10-06
IN171245B (enExample) 1992-08-22
EP0264222B1 (en) 1994-03-02
US4731338A (en) 1988-03-15
IE872671L (en) 1988-04-09

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