JPS6292458A - 半導体容量結合素子 - Google Patents

半導体容量結合素子

Info

Publication number
JPS6292458A
JPS6292458A JP60233825A JP23382585A JPS6292458A JP S6292458 A JPS6292458 A JP S6292458A JP 60233825 A JP60233825 A JP 60233825A JP 23382585 A JP23382585 A JP 23382585A JP S6292458 A JPS6292458 A JP S6292458A
Authority
JP
Japan
Prior art keywords
region
island
resistor
capacitance
capacitive coupling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60233825A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0453103B2 (enrdf_load_stackoverflow
Inventor
Fumio Santo
山藤　文雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP60233825A priority Critical patent/JPS6292458A/ja
Publication of JPS6292458A publication Critical patent/JPS6292458A/ja
Publication of JPH0453103B2 publication Critical patent/JPH0453103B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP60233825A 1985-10-18 1985-10-18 半導体容量結合素子 Granted JPS6292458A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60233825A JPS6292458A (ja) 1985-10-18 1985-10-18 半導体容量結合素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60233825A JPS6292458A (ja) 1985-10-18 1985-10-18 半導体容量結合素子

Publications (2)

Publication Number Publication Date
JPS6292458A true JPS6292458A (ja) 1987-04-27
JPH0453103B2 JPH0453103B2 (enrdf_load_stackoverflow) 1992-08-25

Family

ID=16961150

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60233825A Granted JPS6292458A (ja) 1985-10-18 1985-10-18 半導体容量結合素子

Country Status (1)

Country Link
JP (1) JPS6292458A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5124761A (en) * 1988-01-22 1992-06-23 Sony Corporation Semiconductor apparatus
US5767757A (en) * 1996-07-29 1998-06-16 Harris Corporation Electrically variable R/C network and method
JPH10163421A (ja) * 1996-11-29 1998-06-19 Sanyo Electric Co Ltd 半導体集積回路

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5565453A (en) * 1978-11-10 1980-05-16 Nec Corp Semiconductor device
JPS60170964A (ja) * 1984-02-15 1985-09-04 Rohm Co Ltd 容量素子

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5565453A (en) * 1978-11-10 1980-05-16 Nec Corp Semiconductor device
JPS60170964A (ja) * 1984-02-15 1985-09-04 Rohm Co Ltd 容量素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5124761A (en) * 1988-01-22 1992-06-23 Sony Corporation Semiconductor apparatus
US5767757A (en) * 1996-07-29 1998-06-16 Harris Corporation Electrically variable R/C network and method
JPH10163421A (ja) * 1996-11-29 1998-06-19 Sanyo Electric Co Ltd 半導体集積回路

Also Published As

Publication number Publication date
JPH0453103B2 (enrdf_load_stackoverflow) 1992-08-25

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