JPS6290981A - 赤外線検知素子の製造方法 - Google Patents
赤外線検知素子の製造方法Info
- Publication number
- JPS6290981A JPS6290981A JP60219339A JP21933985A JPS6290981A JP S6290981 A JPS6290981 A JP S6290981A JP 60219339 A JP60219339 A JP 60219339A JP 21933985 A JP21933985 A JP 21933985A JP S6290981 A JPS6290981 A JP S6290981A
- Authority
- JP
- Japan
- Prior art keywords
- film
- wafer
- sensing element
- infrared sensing
- protective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Light Receiving Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60219339A JPS6290981A (ja) | 1985-10-02 | 1985-10-02 | 赤外線検知素子の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60219339A JPS6290981A (ja) | 1985-10-02 | 1985-10-02 | 赤外線検知素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6290981A true JPS6290981A (ja) | 1987-04-25 |
JPH0449271B2 JPH0449271B2 (enrdf_load_html_response) | 1992-08-11 |
Family
ID=16733903
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60219339A Granted JPS6290981A (ja) | 1985-10-02 | 1985-10-02 | 赤外線検知素子の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6290981A (enrdf_load_html_response) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008546177A (ja) * | 2005-05-16 | 2008-12-18 | Ii−Vi インコーポレイテッド | 高性能のCdxZn1−xTe(0≦x≦1)のX線及びγ線の放射線検出器およびその製造方法 |
-
1985
- 1985-10-02 JP JP60219339A patent/JPS6290981A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008546177A (ja) * | 2005-05-16 | 2008-12-18 | Ii−Vi インコーポレイテッド | 高性能のCdxZn1−xTe(0≦x≦1)のX線及びγ線の放射線検出器およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0449271B2 (enrdf_load_html_response) | 1992-08-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2577330B2 (ja) | 両面ゲ−ト静電誘導サイリスタの製造方法 | |
US3287612A (en) | Semiconductor contacts and protective coatings for planar devices | |
JPS6145396B2 (enrdf_load_html_response) | ||
JPS62199068A (ja) | 半導体装置及びその製造方法 | |
US3920861A (en) | Method of making a semiconductor device | |
JPS6290981A (ja) | 赤外線検知素子の製造方法 | |
JPS5627972A (en) | Manufacture of compound semiconductor device | |
JPS5661169A (en) | Preparation of compound semiconductor device | |
JPH022175A (ja) | 薄膜トランジスタ及びその製造方法 | |
JPH0351823A (ja) | Mim型非線形スイッチング素子の製造方法 | |
JPH0951098A (ja) | 薄膜トランジスタおよびその製造方法 | |
JPS6467970A (en) | Thin film transistor | |
JPS6148957A (ja) | Mosキヤパシタの製造方法 | |
KR950012764A (ko) | 박막트랜지스터 제조방법 | |
JPS57145377A (en) | Manufacture of schottky barrier type field effect transistor | |
JPS58153365A (ja) | 2端子型半導体定電流装置 | |
JPS5712579A (en) | Buried type semiconductor laser | |
JPS6281069A (ja) | 赤外線検知器の製造方法 | |
JPS5743482A (en) | Semiconductor light emitting element | |
KR810000754B1 (ko) | 절연게이트형 전계효과 트랜지스터 | |
Zeto et al. | Fabrication and characterization of a GaAs lateral optical switch with Ni/Ge/Au ohmic contacts | |
JPS6051263B2 (ja) | 半導体装置の製造方法 | |
JPS6261364A (ja) | 薄膜半導体装置の製造方法 | |
JPS5972723A (ja) | 3−5族化合物半導体のオ−ミツク電極の形成方法 | |
JPS63302575A (ja) | ショットキ障壁ゲ−ト電界効果トランジスタの製造方法 |