JPS628875B2 - - Google Patents

Info

Publication number
JPS628875B2
JPS628875B2 JP55157136A JP15713680A JPS628875B2 JP S628875 B2 JPS628875 B2 JP S628875B2 JP 55157136 A JP55157136 A JP 55157136A JP 15713680 A JP15713680 A JP 15713680A JP S628875 B2 JPS628875 B2 JP S628875B2
Authority
JP
Japan
Prior art keywords
latch circuit
transistor
fatmos
circuit
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55157136A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5683893A (en
Inventor
Uorutaa Edowaazu Korin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HYUUZU MAIKUROEREKUTORONIKUSU Ltd
Original Assignee
HYUUZU MAIKUROEREKUTORONIKUSU Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HYUUZU MAIKUROEREKUTORONIKUSU Ltd filed Critical HYUUZU MAIKUROEREKUTORONIKUSU Ltd
Publication of JPS5683893A publication Critical patent/JPS5683893A/ja
Publication of JPS628875B2 publication Critical patent/JPS628875B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down

Landscapes

  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP15713680A 1979-11-12 1980-11-10 Durable bistable semiconductor latch circuit Granted JPS5683893A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7939044A GB2063601B (en) 1979-11-12 1979-11-12 Non-volatile semiconductor memory circuits

Publications (2)

Publication Number Publication Date
JPS5683893A JPS5683893A (en) 1981-07-08
JPS628875B2 true JPS628875B2 (enExample) 1987-02-25

Family

ID=10509128

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15713680A Granted JPS5683893A (en) 1979-11-12 1980-11-10 Durable bistable semiconductor latch circuit

Country Status (7)

Country Link
US (1) US4342101A (enExample)
EP (1) EP0028935B1 (enExample)
JP (1) JPS5683893A (enExample)
CA (1) CA1150784A (enExample)
DE (1) DE3071124D1 (enExample)
GB (1) GB2063601B (enExample)
HK (1) HK72684A (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0080415B1 (en) * 1981-11-23 1990-10-10 Fairchild Semiconductor Corporation Self-refreshing memory cell
EP0311146A1 (en) * 1981-11-23 1989-04-12 Fairchild Semiconductor Corporation Self-refreshing memory cell
US4423491A (en) * 1981-11-23 1983-12-27 Fairchild Camera & Instrument Corp. Self-refreshing memory cell
US4435786A (en) 1981-11-23 1984-03-06 Fairchild Camera And Instrument Corporation Self-refreshing memory cell
US4467451A (en) * 1981-12-07 1984-08-21 Hughes Aircraft Company Nonvolatile random access memory cell
US4554644A (en) * 1982-06-21 1985-11-19 Fairchild Camera & Instrument Corporation Static RAM cell
US4527255A (en) * 1982-07-06 1985-07-02 Signetics Corporation Non-volatile static random-access memory cell
US4571704A (en) * 1984-02-17 1986-02-18 Hughes Aircraft Company Nonvolatile latch
GB2171571B (en) * 1985-02-27 1989-06-14 Hughes Microelectronics Ltd Non-volatile memory with predictable failure modes and method of data storage and retrieval
NL8501631A (nl) * 1985-06-06 1987-01-02 Philips Nv Niet vluchtige, programmeerbare, statische geheugencel en een niet vluchtig, programmeerbaar statisch geheugen.
US4750155A (en) * 1985-09-19 1988-06-07 Xilinx, Incorporated 5-Transistor memory cell which can be reliably read and written
US4748593A (en) * 1986-09-08 1988-05-31 Ncr Corporation High speed nonvolatile memory cell
GB8807225D0 (en) * 1988-03-25 1988-04-27 Hughes Microelectronics Ltd Nonvolatile ram cell
US5051951A (en) * 1989-11-06 1991-09-24 Carnegie Mellon University Static RAM memory cell using N-channel MOS transistors
US5690372A (en) * 1996-02-20 1997-11-25 Jado Bathroom And Hardware Mfg. Corp. Latch mechanism
US6122191A (en) * 1996-05-01 2000-09-19 Cypress Semiconductor Corporation Semiconductor non-volatile device including embedded non-volatile elements
US5892712A (en) * 1996-05-01 1999-04-06 Nvx Corporation Semiconductor non-volatile latch device including embedded non-volatile elements
US5914895A (en) * 1997-09-10 1999-06-22 Cypress Semiconductor Corp. Non-volatile random access memory and methods for making and configuring same
US6144580A (en) * 1998-12-11 2000-11-07 Cypress Semiconductor Corp. Non-volatile inverter latch
US6307773B1 (en) 2000-07-28 2001-10-23 National Semiconductor Corporation Non-volatile latch with program strength verification
US8072834B2 (en) * 2005-08-25 2011-12-06 Cypress Semiconductor Corporation Line driver circuit and method with standby mode of operation
US7859925B1 (en) 2006-03-31 2010-12-28 Cypress Semiconductor Corporation Anti-fuse latch self-test circuit and method
US7821859B1 (en) 2006-10-24 2010-10-26 Cypress Semiconductor Corporation Adaptive current sense amplifier with direct array access capability
US20080151654A1 (en) 2006-12-22 2008-06-26 Allan James D Method and apparatus to implement a reset function in a non-volatile static random access memory
US7760540B2 (en) * 2006-12-22 2010-07-20 Cypress Semiconductor Corporation Combination SRAM and NVSRAM semiconductor memory array
US7710776B2 (en) * 2006-12-27 2010-05-04 Cypress Semiconductor Corporation Method for on chip sensing of SONOS VT window in non-volatile static random access memory
US7859906B1 (en) 2007-03-30 2010-12-28 Cypress Semiconductor Corporation Circuit and method to increase read margin in non-volatile memories using a differential sensing circuit
US8064255B2 (en) * 2007-12-31 2011-11-22 Cypress Semiconductor Corporation Architecture of a nvDRAM array and its sense regime
US8059458B2 (en) * 2007-12-31 2011-11-15 Cypress Semiconductor Corporation 3T high density nvDRAM cell
US8036032B2 (en) 2007-12-31 2011-10-11 Cypress Semiconductor Corporation 5T high density NVDRAM cell

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4004284A (en) * 1975-03-05 1977-01-18 Teletype Corporation Binary voltage-differential sensing circuits, and sense/refresh amplifier circuits for random-access memories
GB2000407B (en) * 1977-06-27 1982-01-27 Hughes Aircraft Co Volatile/non-volatile logic latch circuit

Also Published As

Publication number Publication date
GB2063601B (en) 1984-02-29
EP0028935A3 (en) 1982-05-12
GB2063601A (en) 1981-06-03
HK72684A (en) 1984-09-28
US4342101A (en) 1982-07-27
DE3071124D1 (en) 1985-10-31
JPS5683893A (en) 1981-07-08
EP0028935B1 (en) 1985-09-25
EP0028935A2 (en) 1981-05-20
CA1150784A (en) 1983-07-26

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