JPS628398A - 半導体メモリ - Google Patents
半導体メモリInfo
- Publication number
- JPS628398A JPS628398A JP60146048A JP14604885A JPS628398A JP S628398 A JPS628398 A JP S628398A JP 60146048 A JP60146048 A JP 60146048A JP 14604885 A JP14604885 A JP 14604885A JP S628398 A JPS628398 A JP S628398A
- Authority
- JP
- Japan
- Prior art keywords
- channel
- transistor
- potential
- current mirror
- differential amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60146048A JPS628398A (ja) | 1985-07-03 | 1985-07-03 | 半導体メモリ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60146048A JPS628398A (ja) | 1985-07-03 | 1985-07-03 | 半導体メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS628398A true JPS628398A (ja) | 1987-01-16 |
JPH0415558B2 JPH0415558B2 (de) | 1992-03-18 |
Family
ID=15398919
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60146048A Granted JPS628398A (ja) | 1985-07-03 | 1985-07-03 | 半導体メモリ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS628398A (de) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01173399A (ja) * | 1987-12-26 | 1989-07-10 | Toshiba Corp | 半導体記憶装置 |
JPH02130797A (ja) * | 1988-11-10 | 1990-05-18 | Toshiba Corp | 不揮発性半導体メモリ装置 |
US7072236B2 (en) | 2003-07-28 | 2006-07-04 | Sharp Kabushiki Kaisha | Semiconductor memory device with pre-sense circuits and a differential sense amplifier |
JP2007133987A (ja) * | 2005-11-11 | 2007-05-31 | Toshiba Corp | 半導体記憶装置および半導体記憶装置の駆動方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59119589A (ja) * | 1982-12-27 | 1984-07-10 | Toshiba Corp | 差動増幅器 |
JPS59218696A (ja) * | 1983-05-26 | 1984-12-08 | Toshiba Corp | 半導体メモリ |
JPS61255583A (ja) * | 1985-05-08 | 1986-11-13 | Seiko Epson Corp | センス増幅回路 |
JPS61292293A (ja) * | 1985-04-11 | 1986-12-23 | アドバンスト・マイクロ・デイバイシズ・インコ−ポレ−テツド | 高速cmos電流センス増幅器 |
-
1985
- 1985-07-03 JP JP60146048A patent/JPS628398A/ja active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59119589A (ja) * | 1982-12-27 | 1984-07-10 | Toshiba Corp | 差動増幅器 |
JPS59218696A (ja) * | 1983-05-26 | 1984-12-08 | Toshiba Corp | 半導体メモリ |
JPS61292293A (ja) * | 1985-04-11 | 1986-12-23 | アドバンスト・マイクロ・デイバイシズ・インコ−ポレ−テツド | 高速cmos電流センス増幅器 |
JPS61255583A (ja) * | 1985-05-08 | 1986-11-13 | Seiko Epson Corp | センス増幅回路 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01173399A (ja) * | 1987-12-26 | 1989-07-10 | Toshiba Corp | 半導体記憶装置 |
JPH07101557B2 (ja) * | 1987-12-26 | 1995-11-01 | 株式会社東芝 | 半導体記憶装置 |
JPH02130797A (ja) * | 1988-11-10 | 1990-05-18 | Toshiba Corp | 不揮発性半導体メモリ装置 |
US7072236B2 (en) | 2003-07-28 | 2006-07-04 | Sharp Kabushiki Kaisha | Semiconductor memory device with pre-sense circuits and a differential sense amplifier |
JP2007133987A (ja) * | 2005-11-11 | 2007-05-31 | Toshiba Corp | 半導体記憶装置および半導体記憶装置の駆動方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0415558B2 (de) | 1992-03-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6205068B1 (en) | Dynamic random access memory device having a divided precharge control scheme | |
JP4198201B2 (ja) | 半導体装置 | |
US7504695B2 (en) | SRAM memory cell and method for compensating a leakage current flowing into the SRAM memory cell | |
US6181608B1 (en) | Dual Vt SRAM cell with bitline leakage control | |
US9460760B2 (en) | Data-dependent self-biased differential sense amplifier | |
US7821859B1 (en) | Adaptive current sense amplifier with direct array access capability | |
US7590003B2 (en) | Self-reference sense amplifier circuit and sensing method | |
JPH0241115B2 (de) | ||
US8724396B2 (en) | Semiconductor memory device | |
JPS6322395B2 (de) | ||
US10529389B2 (en) | Apparatuses and methods for calibrating sense amplifiers in a semiconductor memory | |
US6111802A (en) | Semiconductor memory device | |
JP3813400B2 (ja) | 半導体記憶装置 | |
JPS628398A (ja) | 半導体メモリ | |
JPH08129891A (ja) | メモリセル回路 | |
JPH02302993A (ja) | 電源電圧追跡回路及びそれを適用したランダムアクセスメモリ装置 | |
JP3805987B2 (ja) | 半導体記憶装置 | |
JP2006221796A (ja) | 半導体装置 | |
US7079435B2 (en) | Sense amplifier circuit to write data at high speed in high speed semiconductor memory | |
KR0179853B1 (ko) | 반도체 기억소자의 센스앰프 전원 공급회로 | |
JPH03183098A (ja) | センスアンプ回路 | |
KR950002275B1 (ko) | 다른 임계전압을 갖는 p채널 mos 트랜지스터를 포함하는 반도체 직접회로 | |
JP2008103055A (ja) | メモリ | |
KR100386620B1 (ko) | 에스램(sram)의 전원 전압 제어 회로 | |
JP3158281B2 (ja) | メモリ装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |