JPS627715B2 - - Google Patents
Info
- Publication number
- JPS627715B2 JPS627715B2 JP55139476A JP13947680A JPS627715B2 JP S627715 B2 JPS627715 B2 JP S627715B2 JP 55139476 A JP55139476 A JP 55139476A JP 13947680 A JP13947680 A JP 13947680A JP S627715 B2 JPS627715 B2 JP S627715B2
- Authority
- JP
- Japan
- Prior art keywords
- deposited
- semiconductor surface
- manufacturing
- eaves
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
Landscapes
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55139476A JPS5762568A (en) | 1980-10-03 | 1980-10-03 | Manufacture of microwave transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55139476A JPS5762568A (en) | 1980-10-03 | 1980-10-03 | Manufacture of microwave transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5762568A JPS5762568A (en) | 1982-04-15 |
| JPS627715B2 true JPS627715B2 (en:Method) | 1987-02-18 |
Family
ID=15246129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55139476A Granted JPS5762568A (en) | 1980-10-03 | 1980-10-03 | Manufacture of microwave transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5762568A (en:Method) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020085143A1 (ja) | 2018-10-22 | 2020-04-30 | Jxtgエネルギー株式会社 | 結晶性全芳香族ポリエステルおよびポリエステル樹脂組成物 |
-
1980
- 1980-10-03 JP JP55139476A patent/JPS5762568A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020085143A1 (ja) | 2018-10-22 | 2020-04-30 | Jxtgエネルギー株式会社 | 結晶性全芳香族ポリエステルおよびポリエステル樹脂組成物 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5762568A (en) | 1982-04-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4514253A (en) | Manufacture of thin film transistor | |
| US4145459A (en) | Method of making a short gate field effect transistor | |
| US4048712A (en) | Processes for manufacturing semiconductor devices | |
| GB2211350A (en) | A method of producing a schottky gate field effect transistor | |
| JPH06310492A (ja) | チタン系薄膜のエッチング液及び半導体装置の製造方法 | |
| JPS627715B2 (en:Method) | ||
| JPH022175A (ja) | 薄膜トランジスタ及びその製造方法 | |
| KR0162757B1 (ko) | 분리절연막을 이용한 공중교각 금속의 형성방법 | |
| JPS62149138A (ja) | 半導体装置の製造方法 | |
| JPS61240684A (ja) | シヨツトキ−型電界効果トランジスタ及びその製造方法 | |
| JPS6039875A (ja) | 半導体装置の製造方法 | |
| JPS5978586A (ja) | Nbのパタ−ン形成法 | |
| JPS5921193B2 (ja) | 電界効果トランジスタの製造方法 | |
| JPH04291733A (ja) | GaAsデバイス及びT字型ゲート電極の作成方法 | |
| JPH05335339A (ja) | T字型ゲート電極の形成方法 | |
| JPH0745816A (ja) | 半導体装置およびその製造方法 | |
| JPS6025277A (ja) | 半導体装置の製造方法 | |
| JPH0629322A (ja) | 電界効果トランジスタのゲート電極の形成方法 | |
| JPH02199825A (ja) | 電極の製造方法 | |
| KR960013140B1 (ko) | 반도체 소자의 제조 방법 | |
| JP2591639B2 (ja) | 半導体装置の製造方法 | |
| JP2825284B2 (ja) | 半導体装置の製造方法 | |
| JPS625639A (ja) | リフトオフ法 | |
| JPH05251425A (ja) | Au膜エッチング方法 | |
| JPS616870A (ja) | 電界効果トランジスタの製造方法 |