JPS5762568A - Manufacture of microwave transistor - Google Patents
Manufacture of microwave transistorInfo
- Publication number
- JPS5762568A JPS5762568A JP13947680A JP13947680A JPS5762568A JP S5762568 A JPS5762568 A JP S5762568A JP 13947680 A JP13947680 A JP 13947680A JP 13947680 A JP13947680 A JP 13947680A JP S5762568 A JPS5762568 A JP S5762568A
- Authority
- JP
- Japan
- Prior art keywords
- insulator
- etched
- mask
- 1mum
- overhung
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000012212 insulator Substances 0.000 abstract 5
- 238000005530 etching Methods 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13947680A JPS5762568A (en) | 1980-10-03 | 1980-10-03 | Manufacture of microwave transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13947680A JPS5762568A (en) | 1980-10-03 | 1980-10-03 | Manufacture of microwave transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5762568A true JPS5762568A (en) | 1982-04-15 |
| JPS627715B2 JPS627715B2 (ja) | 1987-02-18 |
Family
ID=15246129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13947680A Granted JPS5762568A (en) | 1980-10-03 | 1980-10-03 | Manufacture of microwave transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5762568A (ja) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210388156A1 (en) | 2018-10-22 | 2021-12-16 | Eneos Corporation | Crystalline wholly aromatic polyester and polyester resin composition |
-
1980
- 1980-10-03 JP JP13947680A patent/JPS5762568A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS627715B2 (ja) | 1987-02-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1532349A (en) | Forming holes through dielectric material | |
| GB1537306A (en) | Processing epitaxial layers | |
| JPS5762568A (en) | Manufacture of microwave transistor | |
| JPS5730376A (en) | Manufacture of schottky barrier fet | |
| JPS57103364A (en) | Preparation of field-effect trasistor | |
| JPS6459936A (en) | Manufacture of integrated circuit | |
| JPS57145340A (en) | Manufacture of semiconductor device | |
| JPS57167659A (en) | Manufacture of semiconductor device | |
| JPS57204175A (en) | Manufacture of semiconductor device | |
| JPS6430228A (en) | Manufacture of semiconductor device | |
| JPS6462491A (en) | Formation of metallic pattern | |
| JPS5752130A (en) | Forming method for electrode | |
| JPS57102050A (en) | Manufacture of semiconductor device | |
| JPS57124443A (en) | Forming method for electrode layer | |
| JPS5772331A (en) | Manufacture of semiconductor device | |
| JPS6455890A (en) | Semiconductor substrate | |
| JPS5676569A (en) | Semiconductor device and manufacture thereof | |
| JPS5732654A (en) | Semiconductor integrated circuit device | |
| JPS559415A (en) | Semiconductor manufacturing method | |
| JPS56110229A (en) | Manufacture of semiconductor device | |
| JPS5732653A (en) | Manufacture of semiconductor device | |
| JPS5732640A (en) | Production of semiconductor device | |
| JPS5555546A (en) | Method of wiring semiconductor device | |
| JPS5678141A (en) | Method of forming electrode for semiconductor device | |
| JPS57106120A (en) | Manufacture of semiconductor device |