JPS6262472B2 - - Google Patents

Info

Publication number
JPS6262472B2
JPS6262472B2 JP56045138A JP4513881A JPS6262472B2 JP S6262472 B2 JPS6262472 B2 JP S6262472B2 JP 56045138 A JP56045138 A JP 56045138A JP 4513881 A JP4513881 A JP 4513881A JP S6262472 B2 JPS6262472 B2 JP S6262472B2
Authority
JP
Japan
Prior art keywords
layer
silicon
tantalum oxide
tantalum
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56045138A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57167669A (en
Inventor
Takashi Kato
Masao Taguchi
Nobuo Toyokura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56045138A priority Critical patent/JPS57167669A/ja
Publication of JPS57167669A publication Critical patent/JPS57167669A/ja
Publication of JPS6262472B2 publication Critical patent/JPS6262472B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP56045138A 1981-03-27 1981-03-27 Capacitor and manufacture thereof Granted JPS57167669A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56045138A JPS57167669A (en) 1981-03-27 1981-03-27 Capacitor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56045138A JPS57167669A (en) 1981-03-27 1981-03-27 Capacitor and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS57167669A JPS57167669A (en) 1982-10-15
JPS6262472B2 true JPS6262472B2 (enrdf_load_stackoverflow) 1987-12-26

Family

ID=12710915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56045138A Granted JPS57167669A (en) 1981-03-27 1981-03-27 Capacitor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57167669A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60107854A (ja) * 1983-11-16 1985-06-13 Hitachi Ltd キヤパシタ
JPH0656877B2 (ja) * 1987-09-10 1994-07-27 シャープ株式会社 酸化タンタル薄膜の製造方法
JP2918835B2 (ja) * 1996-02-14 1999-07-12 株式会社日立製作所 半導体装置の製造方法
US6777248B1 (en) * 1997-11-10 2004-08-17 Hitachi, Ltd. Dielectric element and manufacturing method therefor
KR100373159B1 (ko) * 1999-11-09 2003-02-25 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조방법
US7531405B2 (en) 2005-02-28 2009-05-12 Qimonds Ag Method of manufacturing a dielectric layer and corresponding semiconductor device

Also Published As

Publication number Publication date
JPS57167669A (en) 1982-10-15

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